Tunnel oxides in AlSiO_x/p-Si diodes by high pressure, low temperature oxidation of Si(100) and Si(111)

Abstract

Tunnel oxide (SO,) films. about 20 A in thickness, were grown on (100) and (111) oriented, 10 R cm, p-type silicon wafers at a temperature of 250"C, and pressure of 2 atm in dry oxygen ambient. The SiO, films were characterized using AI/SiO,/p-Si MIS diodes with semi-transparent metal electrodes, by variable illumination current-voltage technique. The open-circuit voltage, short-circuit current, ideality factor and reverse saturation current were studied as functions of oxidation time and were found to be in accordance with a reduction of the interface state density with the oxide growth. From the experimental n-values the interlace state densities were calculated and were found to be of the order of IO" cm-'eV-' for both orientations. The reverse saturation current density obtained was of t h e order of 10-'A cm-'for (111) oriented substrates and lO-'A "'for the (100) orientation. The order of the oxide fixed charge was computed using deviation in the experimental barrier height from t h e theoretical barrier height (assuming no fixed charges are present). This was found to be of the order of 10" cm-' in both cases.

Influence of Al/Si atomic ratio on optical and electrical properties of magnetron sputtered Al1-xSixOy coatings

“…7b, this is also the composition region where the Al 2 O 3 phase contribution for refractive index is lower than one calculated from composition, suggesting that some Al atoms are incorporated in SiO 2 phase. A similar effect was seen in resistivity with increasing Si content [9], in the region between 50 and 65 vol% of Al 2 O 3 (from 9 to 13 Si at.%), but not seen in our samples composition.…”

“…In the Al 2 O 3 deposition, an interlayer usually forms at the interface between the oxide and substrate and the Si addition to Al oxide improves the interface quality [9,10]. In this respect, the compensation created by the addition of silicon to Al x O y films [9,10,13] Fig. 9 for the different samples.…”

“…The Maxwell-Wagner theory of a two-layer condenser [30] describes the interfacial space-charge polarization, which occurs at the interface of two contacting slabs of frequency-independent materials with significantly different conductivities and static dielectric constants. In the Al 2 O 3 deposition, an interlayer usually forms at the interface between the oxide and substrate and the Si addition to Al oxide improves the interface quality [9,10]. In this respect, the compensation created by the addition of silicon to Al x O y films [9,10,13] Fig.…”

“…For example, Al 1-x Si x O y and SiO 2 were used as antireflection layer in solar thermal absorber stacks, which also work as a protective barrier layer [1][2][3], SiO 2 and Al 2 O 3 are widely used in electronic devices as thin film transistors, memories structure, tunnel diodes, and Si metal-oxide semiconductors [4][5][6][7]. Also, Al-SiO 2 -(n or p) Si and SiAlO x /p-Si are already used in manufacturing of some specific types of diodes, the socalled tunnel diodes Metal-Insulator-Semiconductor, which are used in microelectronics (memory devices, photo diodes) and in photo cells applications [8,9]. Using Al 1-x Si x O y instead of SiO 2 or Al 2 O 3 enables to have a combination between the properties of SiO 2 and Al 2 O 3 , which may improve the fracture toughness, corrosion and oxidation resistance.…”

Structural and Electrical Properties of Low Temperature Direct Bonded Germanium to Silicon Wafer for Photodetector Applications

“…[5] at each location. The variation of the diode ideality factor can be explained by the different oxide thickness and interface state density (25). A thicker oxide layer in the interface leads to a higher potential barrier in the band diagram which causes an increase of the ideality factor.…”