Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions

Alexandrov, Artem; Zhuravlev, M. Ye.; Tsymbal, Evgeny Y.

doi:10.1103/physrevapplied.12.024056

Cited by 3 publications

(3 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…TAMR is a related phenomenon, which has been observed in magnetic tunnel junctions [109][110][111][112] where the tunneling resistance depends on the magnetization direction of a ferromagnetic electrode. Below, we follow [113] to discuss the TAMR effect in a FTJ with the same structure as that in figure 11(a). The presence of the spin-textured ferroelectric as a tunnel barrier is reflected in the calculated k || -resolved tunneling conductance.…”

Section: Tunneling Anisotropic Magnetoresistancementioning

confidence: 99%

Perspectives of spin-textured ferroelectrics

Tao

Tsymbal

2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Spin–orbit coupling (SOC) links the spin degree of freedom to the orbital motion of electrons in a solid and plays an important role in the emergence of new physical phenomena. In non-centrosymmetric materials, the SOC locks the electron’s spin direction to its momentum resulting in non-trivial spin textures in the reciprocal space. Depending on the crystal symmetry, the spin texture may exhibit Rashba, Dresselhaus, persistent, or more intricate configurations. In ferroelectric materials these spin textures are coupled to the ferroelectric polarization and thus can be controlled by its orientation and magnitude. This provides a promising platform to explore the coupling between spin, orbital, valley, and lattice degrees of freedoms in solids and opens a new direction for nonvolatile spintronic devices, such as a spin-ﬁeld-effect transistor and a valley spin valve. Here, we review the recent advances in spin-texture physics of ferroelectric materials and outline possible device implications.

show abstract

Section: Tunneling Anisotropic Magnetoresistancementioning

confidence: 99%

Perspectives of spin-textured ferroelectrics

Tao

Tsymbal

2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The SDT effect has been studied extensively in various contexts. The tunneling anisotropic magnetoresistance effect in ferroelectric tunnel junctions with ferromagnetic and normal metal electrodes separated by a ferroelectric barrier of finite thickness has been studied, including both Rashba and Dresselhaus spin-orbit coupling [14]. The possibility to control the resistance through ferroelectric polarization of the barrier and through magnetization configuration of the electrodes has been demonstrated in a frame of the model of multiferroic tunnel junction, which explicitly includes the spin-dependent screening potential [15].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Spin Current Polarization in 2D Ferromagnetic/Insulator/Heavy Fermion Material Tunnel Junction Induced by Rashba Spin-Orbit Coupling

Poszwa

2023

Acta Phys. Pol. A

View full text Add to dashboard Cite

A theoretical investigation of the spin-and charge transport properties of the ferromagnetic metal/insulator/heavy fermion Rashba metal tunnel junction is presented. The electron dynamics in the entire system are described within a single-particle effective Hamiltonian. The dependence of the spin current polarization and the low-bias spin-resolved conductance spectra on the macroscopic parameters of the system are studied. We consider an infinite two-dimensional system with periodic boundary conditions imposed along the transverse direction of the junction. We observed that strong spin current polarization amplification and spin current filtering are induced by Rashba spin-orbit coupling in the presence of a large effective masses difference between ferromagnetic metal and heavy fermion Rashba material. The spin-dependent scattering problem is solved analytically within the effective mass approximation in combination with the spin density matrix formalism.

show abstract

“…In a number of theoretical works, the transport properties of the heterostructures were studied. In particular, tunneling anomalous Hall effect and tunneling anisotropic magnetoresistance in heterostructures with this kind of ferroelectric barriers were investigated [12][13][14][15]. Our work is devoted to a particular type of planar Hall effect (PHE) in two-layer system including * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%