Tunneling current bistability of correlated 2D electron–hole layers

Parlangeli, A.; Christianen, P.C.M.; Maan, J.C.; Eaves, L.; Main, P. C.; Henini, M.

doi:10.1016/s0921-4526(98)00499-2

Cited by 7 publications

(8 citation statements)

References 6 publications

(5 reference statements)

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“…Since then several research groups have studied electron-hole bilayers using doped heterostructures. [2,3,4,5,6,7,8,9,10,11,12] Single layer undoped heterostructures commonly referred to as heterostructure insulated-gate field-effect transistors (HIGFETs) have been investigated previously. [13,14,15] In these studies particular interest was paid to the ultra-low density capability afforded by HIGFETs, and the ability to directly control the density and polarity of the carriers.…”

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confidence: 99%

Undoped electron-hole bilayers in a GaAs∕AlGaAs double quantum well

Seamons

Tibbetts

Reno

et al. 2007

Applied Physics Letters

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Articles you may be interested inTwo-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN High mobility two-dimensional hole system in Ga As ∕ Al Ga As quantum wells grown on (100) GaAs substrates Appl.Extremely high electron mobility of pseudomorphic In 0.74 Ga 0.26 As ∕ In 0.46 Al 0.54 As modulation-doped quantum wells grown on ( 411 ) A InP substrates by molecular-beam epitaxy Appl. Phys. Lett. 85, 4043 (2004); 10.1063/1.1807023Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In 0.2 Ga 0.8 As/Al 0.2 Ga 0.8 As quantum well grown by metalorganic vapor phase epitaxyThe authors present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/ AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional electron gas and two-dimensional hole gas. The authors report four-terminal transport measurements of the independently contacted electron and hole layers with balanced densities from 1.2ϫ 10 11 cm −2 down to 4 ϫ 10 10 cm −2 at T = 300 mK. The mobilities can exceed 1 ϫ 10 6 cm 2 V −1 s −1 for electrons and 4 ϫ 10 5 cm 2 V −1 s −1 for holes.

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confidence: 99%

Undoped electron-hole bilayers in a GaAs∕AlGaAs double quantum well

Seamons

Tibbetts

Reno

et al. 2007

Applied Physics Letters

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“…Two-dimensional (2D) electron-hole (e-h) layers of equal density, separated by a distance comparable to the e ective Bohr radius, are particularly interesting physical systems [1][2][3][4][5][6][7][8]. On the one hand, in a magnetic ÿeld, the two e-h layers can separately condense into Laughlin states, giving rise to the fractional quantum Hall e ect (FQHE) [6].…”

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confidence: 99%

Dissociation of indirect excitons: discontinuity and bistability in the tunnel current of 2D electron-hole layers

Parlangeli

Christianen

Maan

et al. 2000

Physica E: Low-dimensional Systems and Nanostructures

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] In these systems, the e-h recombination time can be made as long as 1 sec, therefore allowing thermalization of the carriers to the lattice temperature, a situation that is never reached in strictly 2D e-h systems because of the higher recombination rate. With respect to real atoms, 21 indirect excitons are particularly attractive because of their light mass, which is expected to allow condensation at T ϳ1 K, rather than in the K regime.…”

Section: Introductionmentioning

confidence: 99%

“…To date, most of the experimental work has been done on the optical properties of undoped double quantum wells ͑DQW's͒, [4][5][6][14][15][16] which provide a natural tool for obtaining charge separation. As already realized by Kuramoto and Horie, 17 another attractive possibility is to study the transport 1,2,20 and optical 3 properties of p-i-n single-barrier heterostructures ͑SBH's͒, in which 2D e-h layers of equal density accumulate under forward bias at opposite sides of the barrier. With respect to DQW's, p-i-n SBH's have several advantages.…”

Section: Introductionmentioning

confidence: 99%

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Bistability and discontinuity in the tunnel current of two-dimensional electron-hole layers

et al. 2001

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We present a detailed study of a recently reported discontinuity and bistability in a 12-nm GaAs/AlAs single-barrier p-i-n heterostructure, where a system of spatially separated two-dimensional electron and hole (e-h) layers of equal and tunable density is realized. Both features appear at TՇ300 mK and are strongly enhanced in a magnetic field Bտ10 T perpendicular to the layers, whereas they are suppressed by Bϳ1 T parallel to the layers. They correspond to a discontinuity in the e-h density and in the phase of the current magneto-oscillations. Whereas the high-current state has the expected properties of the uncoupled e-h layers, the low-current state behaves anomalously under all circumstances, and we identify them with a gas of spatially indirect excitons with binding energy 0.03 meVՇE b Շ0.3 meV and 0.5 meVՇE b Շ5 meV at B ϭ0 and Bϭ10 T, respectively. We interpret the bistability as a transition between the two regimes, which arises because of the competition between the in-plane screening, determined by the average e-e (h-h) distance and the magnetic length, and the interlayer e-h attraction.

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Tunneling current bistability of correlated 2D electron–hole layers

Cited by 7 publications

References 6 publications

Undoped electron-hole bilayers in a GaAs∕AlGaAs double quantum well

Undoped electron-hole bilayers in a GaAs∕AlGaAs double quantum well

Dissociation of indirect excitons: discontinuity and bistability in the tunnel current of 2D electron-hole layers

Bistability and discontinuity in the tunnel current of two-dimensional electron-hole layers

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