Tunneling Current in 4H-SiC p-n Junction Diodes

Kaneko, Mitsuaki; Chi, Xilun; Kimoto, Tsunenobu

doi:10.1109/ted.2020.3001909

Cited by 14 publications

(9 citation statements)

References 34 publications

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“…The observation of a BTBT current in GaN having a wide bandgap is not unexpected, since a BTBT current was also observed in heavilydoped 4H-SiC p-n junctions having bandgap energy values similar to that of GaN. 27) Figure 4 presents the reverse bias characteristics for sample sets #1, #2 and #4 at 25 °C, based on assessments of two or three diodes, whose identification number was denoted as for ex. 1DX in Table I, from each set incorporating from zero to fifty TDs.…”

Section: Andmentioning

confidence: 78%

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

Shoji

Narita

Nagasato³

et al. 2021

Appl. Phys. Express

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This work examined reverse leakage currents in GaN p-n junctions nearly free of dislocations. Diodes with shallow bevel mesas and breakdown voltages (BVs) in the range of 130-1000 V exhibited avalanche breakdown at the designed voltages. Significant leakage currents were observed in response to reverse bias values far below the BVs and a weak effect of temperature was also evident. The data were explained based on direct band-to-band tunneling (BTBT). The BTBT current was dominant in those devices having BVs of several hundred volts but was far below the detection limit in the case of a 1000 V class diode.

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Section: Andmentioning

confidence: 78%

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

Shoji

Narita

Nagasato³

et al. 2021

Appl. Phys. Express

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“…[ 11 ] It could also be attributed the phonon‐assisted tunneling process. [ 12 ] In addition to the observed leakage currents, the current rectification ratios

(Rec . = \frac{I_{Forward}}{I_{Reverse}})

which is illustrated in Figure 4b is also a biasing dependent parameter. For YSY, YWY, and YSWY devices

Rec .

could reach ≈20, 9, and 42 times at biasing voltages of 0.32, 1.0, and, 0.90 V, respectively.…”

Section: Resultsmentioning

confidence: 99%

Yb/Se/WO₃/Yb Thin Film Transistors as Rectifiers, N‐Channel Metal Oxide Semiconductor Capacitors, Laser Sensors, and Microwave Bandstop Filters

Qasrawi

Daragme

2022

Physica Status Solidi (a)

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“…To clarify the occurrence of Zener breakdown in SiC, the author’s group prepared mesa pn diodes with 12 different doping densities from 10 16 to 10 19 cm −3 and investigated the leakage current in wide voltage and temperature ranges. 39 ) Here both the N-doped n-layer and Al-doped p-layer were epitaxially grown on a heavily N-doped n-type substrate by chemical vapor deposition at 1650 ℃ with a growth rate of about 8 µm/h. The acceptor density of the p-layer was fixed at 5 × 10 19 cm −3 , while the donor density of the n-layer was changed from 2 × 10 16 to 1 × 10 19 cm −3 .…”

Section: Breakdown Phenomena In Sic Devicesmentioning

confidence: 99%

“…By using a phonon-assisted tunneling model 41 ) with appropriate phonon energies and density of states, the experimental characteristics for all the heavily-doped pn diodes could be well reproduced. 39 )…”

Section: Breakdown Phenomena In Sic Devicesmentioning

confidence: 99%

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High-voltage SiC power devices for improved energy efficiency

Kimoto

2022

Proc. Jpn. Acad., Ser. B

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Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si) devices in terms of high breakdown voltage, low power loss, and fast switching. This review briefly introduces the major features of SiC power devices and then presents research works on breakdown phenomena in SiC pn junctions and related discussion which takes into account the energy band structure. Next, recent progress in SiC metal-oxide-semiconductor field effect transistors, which are the most important unipolar devices, is described with an emphasis on the improvement of channel mobility at the SiO 2 /SiC interface. The development of SiC bipolar devices such as pin diodes and insulated gate bipolar transistors, which are promising for ultrahigh-voltage (>10 kV) applications, are introduced and the effect of carrier lifetime enhancement is demonstrated. The current status of mass production and how SiC power devices can contribute to energy saving are also described.

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Tunneling Current in 4H-SiC p-n Junction Diodes

Cited by 14 publications

References 34 publications

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

Yb/Se/WO₃/Yb Thin Film Transistors as Rectifiers, N‐Channel Metal Oxide Semiconductor Capacitors, Laser Sensors, and Microwave Bandstop Filters

High-voltage SiC power devices for improved energy efficiency

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Tunneling Current in 4H-SiC p-n Junction Diodes

Cited by 14 publications

References 34 publications

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

Yb/Se/WO3/Yb Thin Film Transistors as Rectifiers, N‐Channel Metal Oxide Semiconductor Capacitors, Laser Sensors, and Microwave Bandstop Filters

High-voltage SiC power devices for improved energy efficiency

Contact Info

Product

Resources

About

Yb/Se/WO₃/Yb Thin Film Transistors as Rectifiers, N‐Channel Metal Oxide Semiconductor Capacitors, Laser Sensors, and Microwave Bandstop Filters