Tunneling Current–Voltage Characteristics of Graphene Field-Effect Transistor

Abstract

We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the source-drain current. The equations of the model of a graphene nanoribbon field-effect transistor (GNR-FET) include the Poisson equation in the weak nonlocality approximation. Using this model, we find explicit analytical formulas for the spatial distributions of the electric potential along the channel and for the GNR-FET current-voltage characteristics (the dependences of the source-drain current on the drain voltages as well as on the back gate and top gate voltages) for different geometric parameters of the device. It is shown that the shortening of the top gate can result in a substantial modification of the GNR-FET current-voltage characteristics.

Thermionic and tunneling transport mechanisms in graphene field‐effect transistors

“…(2) is neglected [17,18], so that the relationship between the potential in the channel and the electron and hole charge becomes local. The harnessing of the approximation under consideration makes, in particular, possible an analytical study of essentially nonuniform potential distributions in the NGR-FET channel and the short-gate effects [13].…”

“…The current associated with the interband tunneling processes near the tunneling points t x x = ± is given by [10,11,13] …”

“…The latter controls the source-drain current. The current across this barrier can be associated with the electrons passing over the barrier and the electrons which experience the interband tunneling at the n-p and p-n junctions, i.e., associated with the thermionic and tunneling processes [6][7][8][9][10][11][12][13] (see Fig. 2(c)).…”

Modeling and Performance Evaluation of a Top Gated Graphene MOSFET

“…In most of the existing physical models of graphene for electrical charge and conduction, the first-principle calculation of tunneling effects, band structures, and carrier transport, however, get the superlative ponderosity [15]- [16]. But, complex numerical calculations are required to find out tunneling current distribution.…”

Device Model for Graphene Nanoribbon Phototransistor

“…The detector proposed has a structure of GNR field-effect transistor consisting of an array of GNRs with the side source and drain contacts (to each GNR) sandwiched between the highly conducting substrate and the top gate electrode. The operation of devices with similar structure were explored recently (see, for instance, [17,18,19,20,21,22,23]). Here, we study The structure of GNR-PT under consideration is schematically shown in Fig.…”