Tunneling devices based on graphene/black phosphorus van der Waals heterostructures

Jiang, Xiaoqiang; Li, Xiao‐Kuan; Chen, Shao-Nan; Su, Bao‐Wang; Huang, Keqiang; Liu, Zhibo; Tian, Jianguo

doi:10.1088/2053-1591/ab692c

Cited by 9 publications

(2 citation statements)

References 27 publications

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“…(g) Estimate of the rise and decay time for the heterodiode. (h) Responsivity and detectivity as a function of incident power under 532 nm laser illumination at V ds = 2 V. (i) Comparison of responsivity and response time of various previously reported heterojunctions with the results in the current work. − …”

Section: Resultsmentioning

confidence: 81%

Nanoskiving of van der Waals Materials toward Edge/Basal Plane Contact Heterojunctions for High-Performance Photodetection

Li,

Yan,

et al. 2024

ACS Appl. Mater. Interfaces

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The unique features of edges in van der Waals materials may lead to edge−basal plane contacts that could provide new opportunities for electronic and optoelectronic devices. However, few studies have addressed edge/basal plane contact heterojunctions owing to the formidable challenges in integrating edges with the basal plane to form a heterojunction. Here, taking the example of black phosphorus (BP)/ReS 2 , a heterojunction with contact between the edge and the basal plane was successfully achieved by the introduction of a nanoskiving technique to fabricate BP edges with controlled orientation, followed by the dry transfer of a ReS 2 flake. The deformation of BP during the nanoskiving process was clearly revealed, where interlayer slipping in the BP determined the formation of the edges. The edge/basal plane contact heterojunctions based on BP/ReS 2 exhibited a reverserectifying behavior upon contact, and a high rectifying current was attributed to direct tunneling and Fowler−Nordheim tunneling in low and high bias regimes, respectively. As a photodetector, the heterojunction diode demonstrated an impressive responsivity of 65 A/W, a rapid response time (<10 ms), and polarization-sensitive detection under 532 nm illumination without gate biasing.

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Section: Resultsmentioning

confidence: 81%

Nanoskiving of van der Waals Materials toward Edge/Basal Plane Contact Heterojunctions for High-Performance Photodetection

Li,

Yan,

et al. 2024

ACS Appl. Mater. Interfaces

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“…Changing the As mole fraction x and the BL thickness W [6][7][8] allows to achieve a desirable band alignment and the height of the barriers between GC and the gate, therefore controlling the thermionic activation energy. The latter opens up additional prospects for the FET's optimization and use for novel devices, in particular, photodetectors [9][10][11][12][13][14][15][16][17][18][19][20][21]. Recently [22], we proposed and evaluated the hot-electron bolometric detector of terahertz radiation (THz) based on such FET structures.…”

Section: Introductionmentioning

confidence: 99%

Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers

Ryzhii¹,

Tang²,

Otsuji³

et al. 2023

Preprint

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We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to the excitation of plasmonic oscillations in the GC by the THz signals, the GC-FET detector response can be pronouncedly resonant, leading to elevated values of the detector responsivity. The lateral thermal conductivity of the 2DEG can markedly affect the GC-FET responsivity, in particular, its spectral characteristics. This effect should be considered for the optimization of the GC-FET detectors.

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Low‐Dimensional Black Phosphorus in Sensor Applications: Advances and Challenges

Zhang

Bi³

et al. 2021

Adv Funct Materials

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Low-dimensional black phosphorus (LDBP) materials have emerged, with considerable application potential in sensing due to their unique folded structures and remarkable physicochemical properties. These include anisotropies, layer-dependent and tunable band gaps, high carrier mobilities, high current switching ratios, and excellent electron donor capacities. As a type of supporting material that is favorable to signal transmission or reception, LDBP is widely researched in piezoelectric, flexible, chemical, and biomolecular sensors. This review summarizes the synthetic methods, properties, and modification strategies of LDBP, and then mainly focuses on the research progress in LDBP-based sensor applications, including physical and chemical sensors and biosensors. The major issues in LDBP-based sensor applications are also discussed. Finally, the prospects and challenges in the field of LDBPbased sensors are analyzed.

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Tunneling devices based on graphene/black phosphorus van der Waals heterostructures

Cited by 9 publications

References 27 publications

Nanoskiving of van der Waals Materials toward Edge/Basal Plane Contact Heterojunctions for High-Performance Photodetection

Nanoskiving of van der Waals Materials toward Edge/Basal Plane Contact Heterojunctions for High-Performance Photodetection

Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers

Low‐Dimensional Black Phosphorus in Sensor Applications: Advances and Challenges

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