Tunneling electroresistance in multiferroic heterostructures

Barrionuevo, D.; Zhang, Le; Ortega, N.; Sokolov, Andrei; Kumar, Ashok; Misra, Pankaj; Scott, J. F.; Katiyar, Ram S.

doi:10.1088/0957-4484/25/49/495203

Cited by 25 publications

(20 citation statements)

References 42 publications

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“…Therefore in the case of surface charges one should use the average potential calculated in Eq. (7) to estimate its influence. Here we assume that potentials ϕ 1,2 are smaller than the Fermi energy and the surface charges do not change the barrier thickness.…”

Section: Influence Of Fe Surface Chargesmentioning

confidence: 99%

Influence of image forces on electron transport in ferroelectric tunnel junctions

Udalov

Beloborodov

2017

Phys. Rev. B

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We study influence of image forces on conductance of ferroelectric tunnel junctions. We show that the influence of image forces is twofold: i) they enhance the electro-resistance effect due to polarization hysteresis in symmetric tunnel junctions at non-zero bias and ii) they produce the electro-resistance effect due to hysteresis of dielectric permittivity of ferroelectric barrier. We study dependence of ferroelectric tunnel junction conductance on temperature and show that image forces lead to strong conductance variation with temperature.

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Section: Influence Of Fe Surface Chargesmentioning

confidence: 99%

Influence of image forces on electron transport in ferroelectric tunnel junctions

Udalov

Beloborodov

2017

Phys. Rev. B

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“…Most of these applications are based on their excellent piezoelectric properties or on their charge storage capability, exploited in non-volatile memory applications 2 3 . Nowadays, flurry of research is focused on ferroelectric tunnel junctions for novel memory applications 4 5 6 7 8 9 and on photo-effects in ferroelectrics for their integration in solar cells 10 11 12 13 . In both applications, the role of internal electric fields is very important.…”

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confidence: 99%

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Liu

Fina

Bertacco

et al. 2016

Sci Rep

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Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse.

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“…In the last few years, a significant number of experimental works in FTJ have been carried out based in inorganic polar barriers, and TER effects have been observed, that is, Pb(Zr,Ti)O 3 (46)(47)(48)(49)(50), BaTiO 3 (51-54), BiFeO 3 (55,56), and (Ba,Sr)TiO 3 (57) and organic barriers, such as copolymers films of polyvinylidene fluoride (PVDF) (70%)-trifluoroethylene (TrFE) (30%) (58). Researchers observed reversal of polarization through an apparent lattice shift, which was accompanied by an I-V diodelike tunneling dependence.…”

Section: Ferroelectric Tunnel Junction (Ftj) and Multiferroic Tunnel mentioning

confidence: 99%

Ferroelectric/Multiferroic Tunnel Junctions for Multifunctional Applications

Ortega

Barrionuevo

Kumar

et al. 2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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Ferroelectric and multiferroic tunnel junctions (FTJ/MFTJs) are a novel class of next generation nonvolatile memories devices that display simultaneous magnetic spin, electric dipole ordering, and tunneling with cross coupling and have drawn increasing interest due to their multifunctionality for a variety of device applications. With the rapid development of thin‐film growth techniques and characterization tools in the last decade, it is possible to do extensive research in the area of polar barrier tunnel junctions (TJ). This chapter summarizes how the ferroelectric (FE) (polar) nature of the barrier changes the tunneling probability, and briefly, we expose several aspects to be considered in the synthesis of FTJ and MFTJ, such as critical thickness for ferroelectricity, effect of the depolarization field, and the role of interface on ferroelectricity at the nanoscale level. In addition, we include recent research results in FTJ/MFTJ. We focus in particular on PZT (lead zirconate titanate) and BTO (barium titanate) in case of ferroelectric tunnel junction (FTJ), and BFO (bismuth ferrite) and BMO (bismuth manganite) single‐phase multiferroics (MFs) used as barriers in multiferroic tunnel junctions (MFTJ). The variety of interesting physical phenomena of these TJ and their multifunctional properties for various technological applications make the research in this field challenging and promising.

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Tunneling electroresistance in multiferroic heterostructures

Cited by 25 publications

References 42 publications

Influence of image forces on electron transport in ferroelectric tunnel junctions

Influence of image forces on electron transport in ferroelectric tunnel junctions

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Ferroelectric/Multiferroic Tunnel Junctions for Multifunctional Applications

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