Tunneling in the Normal-Metal-Insulator-Superconductor Geometry Using the Bogoliubov Equations of Motion

Griffin, Allan; Demers, Jacques

doi:10.1103/physrevb.4.2202

Cited by 52 publications

(14 citation statements)

References 9 publications

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“…Similar results were obtained in an early work by Griffin and Demers (1971) who solved the Bogoliubov-de Gennes equations with barrier (a square or a δ-function) of a varying strength at an N/S interface. They obtained a result which interpolates between the clean and the tunneling limit.…”

Section: G1 Conventional Andreev Reflectionsupporting

confidence: 87%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

922

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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Section: G1 Conventional Andreev Reflectionsupporting

confidence: 87%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

922

1,204

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show abstract

“…91 For its limitations and extensions see comprehensive reviews by and . 92 A formally analogous problem was considered by Griffin and Demers (1971) in an N/I/S system where the twocomponent wave functions represented electronlike and holelike quasiparticles rather then the two-spin projections; see Sec. IV.A.3.…”

Section: F/i/f Tunnelingmentioning

confidence: 99%

“…⌬ is the pair potential (de Gennes, 1989), E the excitation energy, and u , v ¯are the electronlike quasiparticle and holelike quasiparticle amplitudes, respectively. 97 Griffin and Demers (1971) have solved the Bogoliubov-de Gennes equations with square or ␦-function barriers of varying strength at an N/S interface. They obtained a result that interpolates between the clean and the tunneling limits.…”

Section: Andreev Reflectionmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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“…The current will therefore be ev F /W for each open transverse channel. In practice, the probability of Andreev reflection is less than unity [8,9] and the motion in the metal may be diffusive, but ev F /W per channel remains an upper bound on the critical current.…”

Section: Introductionmentioning

confidence: 99%

Josephson currents in quantum Hall devices

Stone

Lin

2011

Phys. Rev. B

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We consider a simple model for an SNS Josephson junction in which the "normal metal" is a section of a filling-factor ν = 2 integer quantum-Hall edge. We provide analytic expressions for the current/phase relations to all orders in the coupling between the superconductor and the quantum Hall edge modes, and for all temperatures. Our conclusions are consistent with the earlier perturbative study by Ma and Zyuzin [Europhysics Letters 21 941-945 (1993)]: The Josephson current is independent of the distance between the superconducting leads, and the upper bound on the maximum Josephson current is inversely proportional to the perimeter of the Hall device.

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Tunneling in the Normal-Metal-Insulator-Superconductor Geometry Using the Bogoliubov Equations of Motion

Cited by 52 publications

References 9 publications

Semiconductor spintronics

Semiconductor spintronics

Spintronics: Fundamentals and applications

Josephson currents in quantum Hall devices

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