1991
DOI: 10.1016/0921-4534(91)91399-o
|View full text |Cite
|
Sign up to set email alerts
|

Tunneling in YBCO/NbN and YBCO/Au junctions grown selectively on MgO substrates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

1
2
0

Year Published

1992
1992
2005
2005

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(3 citation statements)
references
References 6 publications
1
2
0
Order By: Relevance
“…SEM analysis shows a higher roughness for those parts of the film grown on the mask layer, as shown in figure 3. The surface morphology of the film grown on Ti shows great similarities to the images obtained by Rossel et al [6], who used a 150 nm thick Ti layer to obtain SEG. It can also be seen that the boundary between the two regions is very well defined for the titanium mask, and to a lesser extent for the W mask.…”
Section: Micron-sized Structuressupporting
confidence: 73%
See 1 more Smart Citation
“…SEM analysis shows a higher roughness for those parts of the film grown on the mask layer, as shown in figure 3. The surface morphology of the film grown on Ti shows great similarities to the images obtained by Rossel et al [6], who used a 150 nm thick Ti layer to obtain SEG. It can also be seen that the boundary between the two regions is very well defined for the titanium mask, and to a lesser extent for the W mask.…”
Section: Micron-sized Structuressupporting
confidence: 73%
“…The lateral diffusion of the silicon into the YBCO thin film limits the width of the structures obtained. Rossel et al [6] used 150 nm thick Ti on MgO substrates to obtain structures as small as 1 µm.…”
Section: Introductionmentioning
confidence: 99%
“…The inhibition of conductivity can be achieved by destroying the local crystallinity of select regions. This can be achieved by diffusion of Si [15], SiO 2 [5], Si x N y [16] or Ti [17] or by selectively determining where epitaxial growth can occur through the deposition of a Ti or W layer on selective regions of the substrate. [18] Our chemical-free procedure for fabricating complex sub-micron structures is outlined schematically in figure 1.…”
mentioning
confidence: 99%