Tunneling leakage current in ultrathin (&lt;4 nm) nitride/oxide stack dielectrics

Shi, Ying; Wang, Xiewen; Ma, T.P.

doi:10.1109/55.720195

Cited by 19 publications

(3 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this latter regard, it is worth mentioning that both thermal [10,83] and deposited [84] oxynitrides can be more reliable than pure oxide films. Moreover, high quality silicon nitride and nitride/oxide stacked dielectrics are also expected to play a role for films with equivalent oxide thickness of about 1 nm because of reduced leakage [85].…”

Section: Discussionmentioning

confidence: 99%

Failure physics of ultra-thin SiO₂gate oxides near their scaling limit

Suñé

Nafría

Miranda

et al. 2000

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The present status and near future perspectives for ultra-thin SiO 2 gate oxide films are examined. With the ultimate physical thickness limit of 1 nm on the near horizon, leakage current and reliability issues are discussed. Our choice is to highlight the physics of the involved phenomena because we are convinced that a detailed knowledge of the involved physics is required for any accurate reliability forecasting exercise. The hypothesis of equilibrium conditions in the modelling of tunnel injection through ultra-thin oxide films is discussed. The present knowledge of the physics of degradation and breakdown is briefly reviewed, with particular emphasis on the open problems. The idea that the wear-out is a fluency-and energy-driven process is defended. The problem of monitoring the degradation of the oxide is addressed. The limitations of using indirect electrical monitors are presented and a method based on the analysis of statistical breakdown data is discussed. The status of the different breakdown modes (soft and hard) is considered. In this regard, it is concluded that the study of the mechanisms that control the severity of the breakdown events is one of the priorities in the field of ultra-thin oxide reliability. Finally, some attention is paid to the local probe techniques required for the atomic-scale characterization of the oxide properties.

show abstract

Section: Discussionmentioning

confidence: 99%

Failure physics of ultra-thin SiO₂gate oxides near their scaling limit

Suñé

Nafría

Miranda

et al. 2000

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The results depend on how the mixture is processed. One method places a layer of silicon nitride above a thin SiO 2 layer as the gate insulator (Shi et al 1998). The valued qualities of the contact of SiO 2 on silicon are preserved.…”

Section: New Transistor Designsmentioning

confidence: 99%

Physical limits of silicon transistors and circuits

2005

View full text Add to dashboard Cite

A discussion on transistors and electronic computing including some history introduces semiconductor devices and the motivation for miniaturization of transistors. The changing physics of field-effect transistors and ways to mitigate the deterioration in performance caused by the changes follows. The limits of transistors are tied to the requirements of the chips that carry them and the difficulties of fabricating very small structures. Some concluding remarks about transistors and limits are presented.

show abstract

“…The downscaling of gate oxide thickness leads to increasing importance of issues on oxide degradation characteristics due to larger operating oxide field and direct tunneling current [1][2][3][4][5][6][7] . For gate oxide thinner than 4.0 nm, the direct tunneling becomes dominant mechanism for carrier transport in MOS structures 8,9 . In this thickness regime, the voltage drop and the electric field in oxide layer can be significantly altered by the magnitude of direct tunneling current, and the oxide field does not increase monotonically with decreasing oxide thickness.…”

Section: Introductionmentioning

confidence: 99%

Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effect

Lin

Hwu

2016

ECS Trans.

View full text Add to dashboard Cite

The reliability of MOSCAPs with ultrathin gate oxide is investigated by constant voltage stress tests. The results show that the degradation behavior in gate oxide can be reduced by introducing lateral non-uniformity in oxide thickness to obtain lower sustaining electric field in oxide layer. The strong oxide field transition region between 2.5 nm and 3.5 nm SiO2 thickness is believed to be the origin for the observed degradation behavior, as confirmed by TCAD simulations.

show abstract

Tunneling leakage current in ultrathin (<4 nm) nitride/oxide stack dielectrics

Cited by 19 publications

References 14 publications

Failure physics of ultra-thin SiO₂gate oxides near their scaling limit

Failure physics of ultra-thin SiO₂gate oxides near their scaling limit

Physical limits of silicon transistors and circuits

Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effect

Contact Info

Product

Resources

About

Tunneling leakage current in ultrathin (<4 nm) nitride/oxide stack dielectrics

Cited by 19 publications

References 14 publications

Failure physics of ultra-thin SiO2gate oxides near their scaling limit

Failure physics of ultra-thin SiO2gate oxides near their scaling limit

Physical limits of silicon transistors and circuits

Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effect

Contact Info

Product

Resources

About

Failure physics of ultra-thin SiO₂gate oxides near their scaling limit

Failure physics of ultra-thin SiO₂gate oxides near their scaling limit