Tunneling mechanism of GaAs ultrashallow sidewall tunnel junction

Abstract

Conductance‐voltage (G ‐V) and current‐voltage (J ‐V) measurements were applied to reveal the tunneling mechanisms of GaAs ultra‐shallow sidewall tunnel junctions, which were fabricated by molecular layer epitaxy. From the G ‐V results, peaks were detected at 2, 12 and 14 THz at 6 K. In the J ‐V measurements, the fine structure near the peak voltage and a step in the tunneling current in the negative resistance region can also be observed. The tunneling mechanism is discussed in terms of the band transition, deep level and phonon‐assisted tunneling. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

“…The improved steepness of the Be profile and the enhanced Be interface concentration at the regrown interface are the major reasons for the high J p of sidewall tunnel junctions. Figure 12(a) shows the current-voltage (I-V) characteristics of the sidewall GaAs tunnel junctions fabricated on the normal mesa sidewall as a function of temperature [97]. The temperature dependence of the V S1 near the peak voltage was not observed, where V S is a voltage position of the sharp step (current step) in the NDR region.…”

“…The sidewall GaAs tunnel junctions were evaluated by conductance-voltage measurements (G-V) at 6 K and at room temperature, as shown in figure 12(b) [97]. In the differential G-V curve, the peaks at 9, 49 and 60 mV can be clearly observed only at 6 K, which corresponds to indirect tunnelling of the phonon emission type.…”

The substrate orientation dependence of GaAsSb thin layer and GaSb dots grown by molecular layer epitaxy

“…Tunnel junction is one of the important segments for fabrication of TUNNETT. In our previous work, we successfully fabricated the high performance ultrashallow sidewall tunnel junction by the GaAs molecular layer epitaxy (MLE) [2,3]. It is also reported that the TUNNETT can work in the CW mode with fundamental oscillation frequencies from 0.06 to 0.7 THz [4].…”

Tunneling current of GaAs ultrashallow sidewall n+p+n+ and p+n+in+ structure prepared by area‐selective molecular layer epitaxy

“…In these devices, large-height and narrow-width potential barrier and high tunneling probability of the carrier are required. We successfully fabricated GaAs ultra-shallow sidewall p + n + tunnel junctions with record peak current density [4,5].…”