Tunneling Modulation of Transistor Lasers: Theory and Experiment

Feng, Milton; Qiu, Junyi; Holonyak, N.

doi:10.1109/jqe.2018.2809471

Cited by 16 publications

(3 citation statements)

References 36 publications

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“…[28][29][30][31] Exciton and photon have also been utilized as state variables in novel logic devices. 32,33) In addition to logic operations, these non-charge devices face the "interconnect" challenge, i.e. the transport of non-charge state variables.…”

Section: Sm1003-2mentioning

confidence: 99%

Beyond-CMOS roadmap—from Boolean logic to neuro-inspired computing

Chen

2022

Jpn. J. Appl. Phys.

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As one of the chapters in the International Roadmap of Device and Systems (IRDS), the “Beyond CMOS (BC)” roadmap surveys and catalogs emerging devices and materials, and evaluate their potential and challenges gating their acceptance by the industry. While CMOS is expected to continue to dominate as the platform technology, beyond-CMOS devices may enable novel computing paradigms and efficient hardware accelerators to augment the CMOS platform. Emerging device-architecture co-design and co-optimization are important for achieving the efficiency and functionalities beyond the limit of CMOS technologies. This paper provides a brief overview of the IRDS BC chapter, with the emphasis on the opportunities of beyond-CMOS devices and architectures for neuro-inspired computing paradigms.

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Section: Sm1003-2mentioning

confidence: 99%

Beyond-CMOS roadmap—from Boolean logic to neuro-inspired computing

Chen

2022

Jpn. J. Appl. Phys.

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“…This has prompted investigations into integrating semiconductor light emitting devices with purely electronic devices to produce optoelectronic integrated circuits (OEICs) with expectations of emulating the gains in functionality, speed and compactness that have been so significant in the development of integrated silicon electronics. There has been work on RTD light emitting diode integration [71], RTD laser diode integration [67,115,116], Gunn diode and laser integration [117] and transistor laser integration [118].…”

Section: Introductionmentioning

confidence: 99%

Resonant Tunneling Diode Photonics

Ironside

Romeira

Figueiredo

2019

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Optical communication systems relying on microwave/millimetre-wave-optical transducers are fundamental to the development of applications such as low-cost fibre-optic communication networks, radio-over-fibre wireless communications, and radio phased array antennas. Those systems require the use of very fast optical modulators[72] since laser diodes cannot be directly modulated at frequencies beyond their resonance frequency which is typical below few tens of gigahertz [73]. In this chapter we cover our work on low driving voltage highspeed and highly efficient electrical active electro-absorption modulators (EAMs). The EAM is based on the integration of a double barrier quantum well (DBQW) structure within AlGaAs/GaAs and InGaAlAs/InGaAs unipolar semiconductor optical waveguides and operates at the optical windows corresponding to wavelengths around 900 nm, 1300 and 1550 nm. This novel device is known as resonant tunnelling diode electro-absorption modulator (RTD-EAM).

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“…Отрицательное дифференциальное сопротивление наблюдается при плотностях тока выше границы, определяемой током насыщения, как величина, пропорциональная произведению концентрации доноров на насыщенную скорость дрейфа [2], и при легировании области n 0 более 10 15 см −3 рабочие плотности тока находятся в кА/см 2 диапазоне. В настоящее время существует достаточно широкий спектр приборов на основе полупроводниковых гетероструктур, включающих n + −n 0 -структуры с областью гетероперехода, в первую очередь это импульсные ключи и высокочастотные генераторы [7][8][9], а также оптоэлектронные приборы, такие как мощные полупроводниковые лазеры [10,11], лазеры-тиристоры [12] и лазеры-транзисторы [13]. При этом рабочие плотности тока в таких приборах могут существенно превышать уровень кА/см 2 .…”

Section: Introductionunclassified

Особенности транспорта носителей заряда в структурах n-=SUP=-+-=/SUP=--n-=SUP=-0-=/SUP=--n-=SUP=-+-=/SUP=- с гетеропереходом GaAs/AlGaAs при сверхвысоких плотностях тока

Слипченко¹,

Подоскин²,

Соболева³

et al. 2019

Физика И Техника Полупроводников

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The current–voltage characteristics of n ^+-GaAs/ n ^0-GaAs/ N ^0-AlGaAs/ N ^+-AlGaAs/ n ^+-GaAs isotype heterostructures and n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n ^0-GaAs into N ^0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N ^0-AlGaAs layer of 1 . 0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-differential-resistance region at a voltage of 10 V. Theoretical analysis in terms of the energy-balance model demonstrated that the reverse-biased isotype heterostructure has no negative-differential-resistance region because, in this case, the field domain does not collapse in contrast to what occurs in homostructures.

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Tunneling Modulation of Transistor Lasers: Theory and Experiment

Cited by 16 publications

References 36 publications

Beyond-CMOS roadmap—from Boolean logic to neuro-inspired computing

Beyond-CMOS roadmap—from Boolean logic to neuro-inspired computing

Resonant Tunneling Diode Photonics

Особенности транспорта носителей заряда в структурах n-=SUP=-+-=/SUP=--n-=SUP=-0-=/SUP=--n-=SUP=-+-=/SUP=- с гетеропереходом GaAs/AlGaAs при сверхвысоких плотностях тока

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