2009
DOI: 10.1088/0953-8984/21/4/045305
|View full text |Cite
|
Sign up to set email alerts
|

Tunneling of Dirac electrons through one-dimensional potentials in graphene: aT-matrix approach

Abstract: The standard T-matrix method can be effectively used for studying the dynamics of Dirac electrons under one-dimensional potentials in graphene. The transmission probability expressed in terms of T-matrices and the corresponding ballistic current are derived for any smooth one-dimensional potential, taking into account the chirality of Dirac massless carriers. Numerical calculations are illustrated for the potential approximately describing graphene n-p junctions.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
53
0

Year Published

2010
2010
2021
2021

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 28 publications
(53 citation statements)
references
References 18 publications
0
53
0
Order By: Relevance
“…Currently, the theoretical predictions of NDR pertaining to graphene appear to prevail [47][48][49], and only a few experimental observations of NDR are presented in the literature (in fact, NDR is experimentally observed in lateral structures only in Ref. [50]).…”
Section: Films With Negative Differential Resistancementioning
confidence: 99%
See 1 more Smart Citation
“…Currently, the theoretical predictions of NDR pertaining to graphene appear to prevail [47][48][49], and only a few experimental observations of NDR are presented in the literature (in fact, NDR is experimentally observed in lateral structures only in Ref. [50]).…”
Section: Films With Negative Differential Resistancementioning
confidence: 99%
“…The origin of NDR for I-V curves shown in Figure 8(a) and (b) is mostly likely associated with the theoretically predicted gap in the transmission coefficient for carriers in the barrier between fluorinated graphene and graphene areas. It is caused by the competition of hole-to-electron transport and Klein tunnelling with resonant tunnelling in structures with potential barrier(s) [48].…”
Section: Films With Negative Differential Resistancementioning
confidence: 99%
“…The linear dispersion relation ͉E͉ = បv F ͉k͉ in the band structure is of significance in the electron properties, where v F Ϸ 10 6 ms −1 is the Fermi velocity and k is the Fermi wavevector. The wave function can be represented by twocomponent spinor, 1,2,13,26,27 which corresponds to the amplitude of the two different triangular sublattice A and B.…”
Section: Model and Formalismmentioning
confidence: 99%
“…When the wave function is an evanescent wave in graphene barriers, a transmission gap emerges in the transmission spectra for non-normal incidence. 25,26 We consider a barrier-well system to examine the property of charge carriers in graphene. In our work, transfer-matrix method 20,21,26 will be explored to investigate the transport properties of a graphene multiquantum well system.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation