2013
DOI: 10.1016/j.mee.2012.08.005
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Tunneling oxide engineering by ion implantation of nitrogen for 3D vertical silicon pillar SONOS flash memory

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Cited by 6 publications
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“…It is well known that SONOS has fundamental limitations, such as slow erase speed and poor data retention characteristics at the tunneling oxide thickness of less than 2 nm. In order to solve these problems, modulated tunneling oxide schemes are integrated with the SONOS structure, such as N 2 ion implantation (N 2 I/I) [6], and the bandgap-engineering (BE) method [7]. In addition, flicker noise analysis is carried out, to compare each device characteristics, in particular, the interface properties.…”
Section: Introductionmentioning
confidence: 99%
“…It is well known that SONOS has fundamental limitations, such as slow erase speed and poor data retention characteristics at the tunneling oxide thickness of less than 2 nm. In order to solve these problems, modulated tunneling oxide schemes are integrated with the SONOS structure, such as N 2 ion implantation (N 2 I/I) [6], and the bandgap-engineering (BE) method [7]. In addition, flicker noise analysis is carried out, to compare each device characteristics, in particular, the interface properties.…”
Section: Introductionmentioning
confidence: 99%