Tunneling recombination luminescence in KBr and KCl

Grabovskis, V. J.; Vitols, I.K.

doi:10.1016/0022-2313(79)90002-4

Cited by 32 publications

(13 citation statements)

References 10 publications

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“…In the model of isolated pairs, α does not depend on the excitation dose, and the TL intensity dose dependence is linear at small doses and then becomes sublinear [18,[20][21][22]. In the model of stochastic D and A distribution, α depends on the excitation dose [18,20], and the TL intensity dependence on the dose can be superlinear at the initial decay stages.…”

Section: Resultsmentioning

confidence: 99%

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Tunneling recombination processes in PbWO₄ crystals

Fabeni¹,

Kiisk

Krasnikov

et al. 2007

Phys. Status Solidi (c)

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Time-resolved emission and excitation spectra and luminescence decay kinetics were studied at 160-300 K for undoped and Mo-doped PbWO 4 crystals under XeCl (4.02 eV), N 2 (3.67 eV) and KrF (5.0 eV) pulsed excimer laser excitation. The G(II) emission was found to be responsible for the slow (µs-ms) luminescence decay. Under excitation or after irradiation in the exciton region (E exc = 4.02 eV), this emission accompanies the monomolecular tunneling recombination in genetic pairs of electron and hole centers produced at the photo-thermally stimulated decay of localized excitons, which occurs without release of free charge carriers. Under excitation or after irradiation in the host lattice (E exc = 5.0 eV) and defectrelated (E exc = 3.67 eV) regions, the bimolecular tunneling recombination takes place in chaotic pairs of the electron and hole centers created at the trapping of optically released free charge carriers.

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Section: Resultsmentioning

confidence: 99%

“…(1) The model of isolated spatially correlated genetic pairs of D and A [15,18,[20][21][22]; the recombination in the genetic pairs is the monomolecular process. (2) The model taking into account the recombination between chaotically (stochastically) distributed D and A centers, which are not spatially correlated [22][23][24].…”

Section: Resultsmentioning

confidence: 99%

Tunneling recombination processes in PbWO₄ crystals

Fabeni¹,

Kiisk

Krasnikov

et al. 2007

Phys. Status Solidi (c)

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“…Radiation creation of the groups of spatially correlated defects (GSCDs) has been revealed in highly pure KCl and KBr crystals X-irradiated at 4.2 K. The conclusions on the formation of F-V K -I triplets were based on a careful study of TSL and tunnel luminescence [28,29], of the annealing of the EPR signal of V K and H centres [38,39] or of radiation-induced optical absorption and photostimulated luminescence bands connected with a certain type of Frenkel defects (F, H, α and I centres) [40,41]. The creation of F-V K -I triplets by VUV radiation was investigated in KBr at 8 K [42].…”

Section: Groups Of Spatially Correlated Defects and Tsl At 10-15 K Inmentioning

confidence: 99%

“…KBr crystals X-irradiated at 4.2 K (see, e.g., [28,29]). intrinsic STEs in nominally pure LiF crystals under electron irradiation [24].…”

Section: +mentioning

confidence: 99%

Low-temperature excitonic, electron–hole and interstitial-vacancy processes in LiF single crystals

Nakonechnyi

Kärner

Lushchik

et al. 2005

J. Phys.: Condens. Matter

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The emission spectra and the excitation spectra of various emissions have been measured in LiF crystals at 9 K using VUV radiation of 10-33 eV. Contrary to the luminescence of selftrapped excitons (3.4 eV), the efficiency of several extrinsic emissions (4.2, 4.6 and 5.8 eV) is very low in the region of an exciton absorption (12.4-14.2 eV). A single exciting photon of 28-33 eV is able to create a primary electron-hole (e-h) pair and a secondary exciton. The tunnel phosphorescence has been detected after the irradiation of LiF by an electron beam or X-rays at 6 K, and several peaks of thermally stimulated luminescence (TSL) at 12-170 K appeared at the heating of the sample. It was confirmed that the TSL at 130-150 K is related to the diffusion of self-trapped holes (V K centres). The TSL peak at ~160 K is ascribed to the thermal ionisation of F′ centres. The TSL at 20-30 K and 50-65 K is caused by the diffusion of interstitial fluorine ions (I centres) or H interstitials, respectively. The TSL peak at ~13 K, the most intense after electron or X-irradiation, cannot be detected after LiF irradiation by VUV radiation, selectively forming excitons or e-h pairs. The creation of a spatially correlated anion exciton and an e-h pair is needed for the appearance of this peak: an exciton decays into an F-H pair, a hole forms a V K and an electron transforms H into I (an F-I-V K group is formed) or an F centre into a two-electron F′ centre (an F′-H-V K group). The analysis of the elementary components of the 9-16 K TSL showed that a phonon-induced radiative tunnel recombination of F′-V K (5.6 eV), F-H (~3 eV) and F-V K (3.4 eV) occurs within these groups.Short Title: Low-temperature excitonic, electron-hole and interstitial-vacancy processes in LiF

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“…It has been shown earlier [see, e.g., 9,10] that at least three different types of recombination impurity luminescence occur in face-centered cubic alkali halide crystals doped with mercury-like s 2 ions (In + , Sn 2+ , Tl + , Pb 2+ ): (i) electron recombination luminescence, when conduction electrons ( ) recombine with the holes ( ) localized at/near impurity centers, (ii) hole recombination luminescence caused by the recombination of mobile holes with the electrons localized at/near impurity ions, and (iii) tunnel luminescence connected with the recombination between localized but spatially close and . Recently, tunnel luminescence has been detected in CaSO 4 :Tb 3+ irradiated by an electron beam at 6 K [8].…”

Section: Introductionmentioning

confidence: 92%

Recombination luminescence of CaSO4:Tb3+ and CaSO4:Gd3+phosphors

et al. 2012

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Abstract:A comparative study of the excitation of luminescence by VUV radiation as well as of thermally and photostimulated luminescence has been carried out for CaSO 4 :Tb 3+ and CaSO 4 :Gd 3+ phosphors, where Na + or F -ions are used for charge compensation. The distinction in hole processes for the phosphors with Na + or F -compensators is determined by the differing thermal stability of the holes localized at/near Tb 3+ Na + and Gd 3+ Na + (up to 100-160 K) or at/near Tb 3+ F -V Ca and Gd 3+ F -V Ca centers involving also a cation vacancy (up to 400-550 K). Tunnel luminescence in the pairs of localized electrons and holes nearby Tb 3+ or Gd 3+ has been detected. The mechanisms of electron-hole, hole-electron and tunnel recombination luminescence as well as a subsequent released energy transfer to RE 3+ ions are considered. PACS

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Tunneling recombination luminescence in KBr and KCl

Cited by 32 publications

References 10 publications

Tunneling recombination processes in PbWO₄ crystals

Tunneling recombination processes in PbWO₄ crystals

Low-temperature excitonic, electron–hole and interstitial-vacancy processes in LiF single crystals

Recombination luminescence of CaSO4:Tb3+ and CaSO4:Gd3+phosphors

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Tunneling recombination luminescence in KBr and KCl

Cited by 32 publications

References 10 publications

Tunneling recombination processes in PbWO4 crystals

Tunneling recombination processes in PbWO4 crystals

Low-temperature excitonic, electron–hole and interstitial-vacancy processes in LiF single crystals

Recombination luminescence of CaSO4:Tb3+ and CaSO4:Gd3+phosphors

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Resources

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Tunneling recombination processes in PbWO₄ crystals

Tunneling recombination processes in PbWO₄ crystals