Turbostratic stacked CVD graphene for high-performance devices

Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

doi:10.7567/jjap.57.030311

Cited by 46 publications

(38 citation statements)

References 34 publications

(39 reference statements)

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“…Moreover, the field‐effect mobility observed from the turbostratic multilayer graphene is higher than that observed from the AB‐stacked multilayer graphene as shown in Figure a. Actually, it has been reported that a trilayer turbostratic‐stacked graphene prepared by the repeated transfer of Cu‐CVD monolayer graphene exhibits higher carrier mobility than the monolayer graphene . Therefore, it is considered that the electronic band structure in the grown multilayer graphene in our study preserves the linear dispersion as a quasimonolayer due to a weak interlayer coupling associated with the formation of turbostratic stacking observed in the STEM images (Figure e–g).…”

Section: Resultsmentioning

confidence: 59%

Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties

Negishi

Wei

Yao

et al. 2019

Physica Status Solidi (b)

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Anomalous carrier transport properties in turbostratic multilayer graphene have been studied by Ryota Negishi et al. in article number http://doi.wiley.com/10.1002/pssb.201900437. The conductance and carrier mobility in the synthesized turbostratic multilayer graphene are higher than those of the monolayer graphene used as growth template. The enhancement is caused by a screening effect in multistacking and by a turbostratic stacking effect where the band structure of the multilayer graphene is similar to that of the monolayer graphene.

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Section: Resultsmentioning

confidence: 59%

Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties

Negishi

Wei

Yao

et al. 2019

Physica Status Solidi (b)

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“…Figure a–c shows the transfer characteristics before and after introducing ethanol gas for pristine graphene FET (P‐GFET), sequence‐1‐modified graphene FET (SQ1‐GFET), and sequence‐2‐modified graphene FET (SQ2‐GFET), respectively. Ambipolar characteristics were observed for graphene FETs, owing to a zero bandgap of graphene . The field‐effect mobilities for the devices were estimated to be ≈2000 cm 2 (V·s) −1 .…”

Section: Resultsmentioning

confidence: 99%

Ethanol Detection at the Parts per Billion Level with Single‐Stranded‐DNA‐Modified Graphene Field‐Effect Transistors

Nozaki

Ikuta

Ueno

et al. 2019

Physica Status Solidi (b)

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For realizing the early diagnosis of diseases, detection of gases in exhaled breath in parts per billion (ppb) using compact devices is necessary. Herein, single‐stranded‐DNA‐modified graphene field‐effect transistors (FETs) are fabricated and the transfer characteristics are measured. The results reveal that shifts in the transfer characteristics are obtained by introducing ethanol gas at the ppb level, indicating that single‐stranded‐DNA‐modified graphene FETs detect the gas at the ppb level. Moreover, by modifying DNA sequence 1 or sequence 2, the positive and negative voltage shifts of transfer characteristics are observed, respectively. In contrast, the shifts are hardly obtained using DNA sequence 3, which has a rigid conformation for adsorption of molecules. These differences in the behaviors of the transfer characteristics are attributed to the change in DNA conformation when gas is adsorbed. Therefore, single‐stranded‐DNA‐modified graphene FETs have considerable potential to detect various gases at a low concentration depending on the design of DNA sequences, enabling their promising applications in disease diagnosis.

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“…Fortunately, graphene growth technology has greatly matured in recent years [ 154 , 155 , 156 ]. Moreover, turbostratic graphene has been proposed as a means of suppressing deleterious electrical disturbances in oxide layers under graphene [ 157 , 158 ]. However, there are still a number of important challenges that must be addressed in order to integrate silicon-based semiconductor technology with graphene in terms of uniformity and size [ 159 ].…”

Section: Future Outlookmentioning

confidence: 99%

Graphene Plasmonics in Sensor Applications: A Review

Ogawa

Fukushima

Shimatani

2020

Sensors

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Surface plasmon polaritons (SPPs) can be generated in graphene at frequencies in the mid-infrared to terahertz range, which is not possible using conventional plasmonic materials such as noble metals. Moreover, the lifetime and confinement volume of such SPPs are much longer and smaller, respectively, than those in metals. For these reasons, graphene plasmonics has potential applications in novel plasmonic sensors and various concepts have been proposed. This review paper examines the potential of such graphene plasmonics with regard to the development of novel high-performance sensors. The theoretical background is summarized and the intrinsic nature of graphene plasmons, interactions between graphene and SPPs induced by metallic nanostructures and the electrical control of SPPs by adjusting the Fermi level of graphene are discussed. Subsequently, the development of optical sensors, biological sensors and important components such as absorbers/emitters and reconfigurable optical mirrors for use in new sensor systems are reviewed. Finally, future challenges related to the fabrication of graphene-based devices as well as various advanced optical devices incorporating other two-dimensional materials are examined. This review is intended to assist researchers in both industry and academia in the design and development of novel sensors based on graphene plasmonics.

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Turbostratic stacked CVD graphene for high-performance devices

Cited by 46 publications

References 34 publications

Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties

Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties

Ethanol Detection at the Parts per Billion Level with Single‐Stranded‐DNA‐Modified Graphene Field‐Effect Transistors

Graphene Plasmonics in Sensor Applications: A Review

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