Twinned epitaxial layers formed on Si(111)√<b>3</b>×√<b>3</b>-B

Hibino, Hiroki; Sumitomo, Koji; Ogino, T.

doi:10.1116/1.581199

Cited by 35 publications

(15 citation statements)

References 13 publications

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“…Recently, a remarkable degree of control of twinning and polytype generation was demonstrated in III-V NW systems, 3,4 allowing for pure wurtzite and zinc-blende NWs to be grown, as well as polytype-and twin-superlattices. Polytype formation is less explored in group IV semiconductors, 5,9 although theoretical investigations predict distinct and possibly useful electronic properties. 10,11 It is known that {111} planar faults occur along the growth axis of 〈112〉 oriented Si NWs.…”

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confidence: 99%

Ordered Stacking Fault Arrays in Silicon Nanowires

2009

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Correlated Raman microscopy and transmission electron microscopy were used to study the ordering of {111} planar defects in individual silicon nanowires. Detailed electron diffraction and polarization-dependent Raman analysis of individual nanowires enabled assessments of the stacking fault distribution, which varied from random to periodic, with the latter giving rise to local domains of 2H and 9R polytypes rather than the 3C diamond cubic structure. Some controversies and inconsistencies concerning earlier reports of polytypes in Si nanowires were resolved.

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confidence: 99%

Ordered Stacking Fault Arrays in Silicon Nanowires

2009

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“…As reported recently, boron acts there as a subsurfactant by a change of the growth mode towards layerby-layer growth via nucleation of Si islands 4 MLs high [3,4]. The islands are nucleated in twin positions with respect to the substrate resulting in a change of Si epitaxial layer orientation [5,6]. By alternating change of the growth conditions twinning-superlattices were grown.…”

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confidence: 93%

“…By alternating change of the growth conditions twinning-superlattices were grown. [6,7] This special behavior could open the way to create miscellaneous Si crystal structures (polytypes) with modified physical properties by an artificial stacking of Si MLs in an epitaxial growth process or heterostructures containing different Si polytypes [7]. Although the surface structure of boron covered Si(111) surfaces has been intensively studied, the Si epitaxial growth mode on boron covered Si it not well known.…”

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confidence: 99%

Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

Fissel

Krügener

Bugiel

et al. 2008

2008 Conference on Optoelectronic and Microelectronic Materials and Devices

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Epitaxial growth of silicon on heavily boron-doped Si(111) surface was investigated. In our experiments, we found a new growth mode in the very initial stage for boron-coverage below 0.5 monolayer (ML) likely associated with defect-induced nucleation of Si islands. The initially stage of growth on boroncovered Si(111) could be interpreted by a quasi van der Waals like epitaxy, where Si adatoms catch sites on the surface with only slightly deeper depression in the flat surface potential without significant bonding to the neighboring atoms. Deposition of Si at temperature below 800 K results in a layer-by-layer growth via nucleation and coalescence of two-bilayer Si islands on top of the initially formed van der Waals like buffer Si buffer layer, before the transition in the normal double layer growth mode occurred. The grown Si layers were found in twin position with respect to the underlying Si(111) substrate, resulting in a stacking fault in the substrate/layer interface. Structures with twin boundaries arranged periodically along the [111]-direction and separated by only a few Si double layers were obtained by repetition of a multi-step procedure several times. In such a way we obtained structures with regions of a twin repeat sequence ranging from 12 Si bilayers, corresponding to a twinning-superlattice, down to 4 bilayers, what is equivalent to a hexagonal 8H-Si polytype.

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“…The method is tested on Ge, Si, and GaAs superlattice, since TSL's are presently known to occur in amorphized Ge films,1 artifically grown whiskers,2 and very recently Si-based TSL was successfully demonstrated by boron mediated epitaxial growth. 3 The paper is organized as follows. In Sec.…”

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Electronic structure and intersubband absorption in p-doped twinning superlattices

Tadić

Ikonić

1999

SPIE Proceedings

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The effective mass model of the electronic structure and intersubband absorption in p-doped twinning superlattices is devised. As the bulk states basis, heavy hole (Hil), light hole (LH) and split-off (SO) band Bloch functions, properly rotated according to the crystal orientation, are used. Furthermore, delta potential is introduced at the interface between two layers to model the corresponding microscopic potential. Peculiar electronic structure offers coupling between otherwise forbidden states in composite superlattices. This coupling arises from the change of both the off-diagonal terms of the velocity operator and the Luttinger parameters across two interfaces belonging to the superlattice period. The peak of the absorption coefficient for x polarized light (z is the growth direction) arises mainly from transitions between Lu and 11112 miniband. This peak is located in the midwavelength infrared window for all three investigated semiconductors, GaAs, Ge, and Si. It is shown that the dipole matrix elements are responsible for absorption. It is important to note that the magnitude of the absorption coefficient agrees with the results of the pseudopotential theory. The results indicate the usefuliness of this structure, which has recently been realized, in the state-of-art quantum well infrared photodetectors.

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Twinned epitaxial layers formed on Si(111)√3×√3-B

Cited by 35 publications

References 13 publications

Ordered Stacking Fault Arrays in Silicon Nanowires

Ordered Stacking Fault Arrays in Silicon Nanowires

Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

Electronic structure and intersubband absorption in p-doped twinning superlattices

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