Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C₃H₅-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation

Abstract

Technology computer-aided design (TCAD) kinetic Monte Carlo simulations revealed the unique recrystallization processes of discrete amorphous regions connected to a buried amorphous layer in a C3H5-molecular-ion-implanted silicon (Si) substrate. The faithful simulation models show that the discrete amorphous regions are first recrystallized two-dimensionally in the lateral direction from both sides and separated from the buried amorphous layer. Then, the separated discrete amorphous regions are recrystallized three-dimensionally in the lateral and vertical directions from both sides and the bottom. We found that the first two-dimensional recrystallization of discrete amorphous regions is caused by the retardation of solid-phase epitaxial growth at the Si substrate surface and near the buried amorphous layer. We also found that the large (small) discrete amorphous regions require a long (short) two-dimensional recrystallization before separating from the buried amorphous layer. The transition point in the recrystallization dimension can be determined from the lateral recrystallization length and the equivalent radius of discrete amorphous regions.