Two-color HgCdTe infrared staring focal plane arrays

Smith, E. P.; Pham, L. T.; Venzor, G. M.; Norton, E. M.; Newton, Michael; Goetz, P. M.; Randall, Valerie; Pierce, Gregory; Patten, E. A.; Coussa, R. A.; Kosai, K.; Radford, W. A.; Edwards, John; Johnson, S. M.; Baur, Stefan T.; Roth, J. A.; Nosho, B. Z.; Jensen, J. Eric; Longshore, Randolph E.

doi:10.1117/12.507811

Cited by 16 publications

(6 citation statements)

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“…Switching times within the detector have to be in the order of microseconds in order to detect changing imagery rapidly between band 1 and band 2 sequentially. Readout electronics developed by Raytheon has the capability with time division multiplexed integration (TDMI) to have bias switching times shorter than the frame time [19]. Tradeoff studies of single mesa versus double mesa and simultaneous versus sequential modes of operation suggest that the single mesa design would offer high fill factor although the double mesa structure (planer architecture) may have fewer process issues, offering higher yield.…”

Section: Multicolor Irfpasmentioning

confidence: 98%

A review of advances in EO/IR focal plane array technology for space system applications

Becker

2006

SPIE Proceedings

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A variety of single color and multicolor Electro Optical/Infrared (EO/IR) Focal Plane Array technologies are being developed for Space System Applications. There has been a significant research and development effort to date to improve the technology in single and multicolor wavelength bands that include the SWIR, MWIR and LWIR spectral regions. This review paper will address the current technologies and new ones that will be useful for near term applications and also can provide further improvements for future systems applications.

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Section: Multicolor Irfpasmentioning

confidence: 98%

A review of advances in EO/IR focal plane array technology for space system applications

Becker

2006

SPIE Proceedings

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“…The mesas are formed using a reactive dry etch process that produces a smooth and steep sidewall. 7 This structure achieves approximately 100% optical fill factor in each band due to total internal reflection of the incident radiation off the mesa sidewalls. The high LWIR fill-factor of this structure offers advantages over structures that require two contacts per unit cell.…”

Section: Two-color Detector and Fpa Architecturementioning

confidence: 99%

Third generation FPA development status at Raytheon Vision Systems (Invited Paper)

et al. 2005

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Raytheon Vision Systems (RVS) is developing two-color, large-format infrared FPAs to support the US Army's Third Generation FLIR systems**. RVS has produced 640 x 480 two-color FPAs with a 20 µm pixel pitch. Work is also underway to demonstrate a 1280 x 720 two-color FPA in 2005. The FPA architecture has been designed to achieve nearly simultaneous temporal detection of the spectral bands while being producible for pixel dimensions as small as 20 microns. Raytheon's approach employs a readout integrated circuit (ROIC) with Time Division Multiplexed Integration (TDMI). This ROIC is coupled to bias-selectable two-color detector array with a single contact per pixel. The twocolor detector arrays are fabricated from MBE-grown HgCdTe triple layer heterojunction (TLHJ) wafers. The single indium bump design is producible for 20 µm unit cells and exploits mature fabrication processes that are in production at RVS for Second Generation FPAs. This combination allows for the high temporal and spatial color registration while providing a low-cost, highly producible and robust manufacturing process.High-quality MWIR/LWIR (M/L) 640 x 480 TDMI FPAs with have been produced and imaged from multiple fabrication lots. These FPAs have LWIR cutoffs ranging to 11 µm at 78K. These 20 µm pixel FPAs have demonstrated excellent sensitivity and pixel operabilities exceeding 99%. NETDs less than 25 mK at f/5 have been demonstrated for both bands operating simultaneously.

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] However, ICP plasma processing, used in HgCdTe, is still maturing and continued research is needed. 4,7,14 ICP plasma processing may also be used to replace conventional wet chemical clean-up, and even be used in the surface preparation for epitaxy of II-VI materials.…”

Section: Introductionmentioning

confidence: 98%

Plasma Passivation Etching for HgCdTe

Stoltz

Benson

Smith

2009

Journal of Elec Materi

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Inductively coupled plasmas (ICP) are the high-density plasmas of choice for the processing of HgCdTe and related compounds. Most dry plasma process works have been performed on HgCdTe for pixel delineation and the p-to-ntype conversion of HgCdTe. We would like to use the advantages of ''dry'' plasma processing to perform passivation etching of HgCdTe. Plasma processing promises the ability to create small vias, 2 lm or less with excellent uniformity across a wafer, good run-to-run uniformity, and good etch rate control. In this study we developed processes to controllably etch CdTe, the most common passivation material used for photovoltaic-based HgCdTe devices. We created a process based on xenon gas that allows for the slow controllable CdTe etch at only 0.035 lm/min, with smooth morphology and rounded corners to promote further processing.

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Two-color HgCdTe infrared staring focal plane arrays

Cited by 16 publications

References 0 publications

A review of advances in EO/IR focal plane array technology for space system applications

A review of advances in EO/IR focal plane array technology for space system applications

Third generation FPA development status at Raytheon Vision Systems (Invited Paper)

Plasma Passivation Etching for HgCdTe

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