Two-component spatially inhomogeneous (GaAl)As heterojunction laser

Optical bistability in semiconductor injection lasers

“…This is given approximately by (24) where g and / are the lateral distributions of gain and intensity and v the laser frequency. Since the system is near threshold, the depression in carrier density near the centre due to the hole burning may be written aŝ -J R (x)x s /ed (25) with a corresponding local increase in refractive index…”

“…The early work used GaAs homostructure lasers [10][11][12]14] while later experiments proposed by Paoli [15] using double heterostructure GaAs/GaAlAs [16][17][18][19][20][21][22][23][24][25] and GalnAsP [26][27][28][29][30][31] devices have demonstrated nanosecond switching times at milliwatt power levels. To observe bistability rather than unstable pulsations, it is necessary that the contacts to the gain and absorbing regions be well isolated.…”