Two computational methods for describing size selected nanocluster growth and obtaining accurate cluster size distributions

Pirkkalainen, Kari; Riekki, K.A.; Koponen, Ismo T.

doi:10.1016/j.commatsci.2007.11.007

Cited by 6 publications

(11 citation statements)

References 41 publications

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“…The results indicate a Gaussian type distribution with small but persistently remaining skewness [10,16]. The skewness is connected to the drift velocity ( Fig.…”

Section: The Stationary Size Distributionmentioning

confidence: 98%

Size selected growth of nanodots: Ion beam assisted deposition and transition from 2D to 3D growth

Riekki

Koponen

2012

Nuclear Instruments and Methods in Physics Research Section B:

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“…The results indicate a Gaussian type distribution with small but persistently remaining skewness [10,16]. The skewness is connected to the drift velocity ( Fig.…”

Section: The Stationary Size Distributionmentioning

confidence: 98%

Size selected growth of nanodots: Ion beam assisted deposition and transition from 2D to 3D growth

Riekki

Koponen

2012

Nuclear Instruments and Methods in Physics Research Section B:

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“…Regarding the description of the growth process, we will use a kinetic approach based on growth. 20,27 A mean-field chemical potential for island growth was introduced in the Fokker-Planck model to describe the coarsening process of the quantum dots on a substrate with an external deposition of material in Refs. 16-18. In their model, they assume that at each volume there is only one island type existing even when two island types are considered.…”

Section: B the Fokker-planck Model For Growth Processmentioning

confidence: 99%

“…In the prototypical Ge/Si system, small islands have a pyramidal shape with a rectangular base, called 'pyramid'; large islands have a multifaceted shape which has multiple steep facets near the foot of the pyramid, called 'dome'. Because of the complexity of the epitaxial growth process, a large amount of research [3,5,[11][12][13][14][15][16][17][18][19][20][21][22][23][24] has been done to study the size and shape distribution of QDs in an array of islands during growth in order to get control on the QD distribution in production.…”

Section: Introductionmentioning

confidence: 99%

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A Fokker–Planck reaction model for the epitaxial growth and shape transition of quantum dots

Wei¹,

Spencer²

2017

Proc. R. Soc. A.

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We construct a Fokker-Planck reaction (FPR) model to investigate the dynamics of the coupled epitaxial growth and shape transition process of an array of quantum dots (QDs). The FPR model is based on a coupled system of Fokker-Planck equations wherein the distribution of each island type is governed by its own Fokker-Planck equation for growth, with reaction terms describing the shape transitions between islands of different types including asymmetric shapes. The reaction terms for the shape transitions depend on the island size and are determined from explicit calculations of the lowest barrier pathway for each shape transition. This mean-field model enables us to consider the kinetics of asymmetric shape transitions and study the evolution of island shape distributions during the coupled growth and transition process. Asymmetric metastable shapes play a crucial role in the dynamics, with asymmetric QDs comprising up to 10% of the population, and with up to 100% of the shape transitions passing through asymmetric shapes. Moreover, we find that the characteristic multimodal distribution of pyramid/dome QD coarsening can be eliminated at sufficiently high temperature and deposition rate.

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“…In the reaction kinetic model [129][130][131][132][133][134][135], the growth of a QD via individual adatom events of atomic attachment to and detachment from the epitaxial island can be expressed in the form of a chemical reaction,…”

Section: Reaction Kinetic Modelmentioning

confidence: 99%

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

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Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp 2-bonded to sp 3-bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.

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Two computational methods for describing size selected nanocluster growth and obtaining accurate cluster size distributions

Cited by 6 publications

References 41 publications

Size selected growth of nanodots: Ion beam assisted deposition and transition from 2D to 3D growth

Size selected growth of nanodots: Ion beam assisted deposition and transition from 2D to 3D growth

A Fokker–Planck reaction model for the epitaxial growth and shape transition of quantum dots

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

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