Two-dimensional analysis for emitter ledge thickness of InGaP∕GaAs heterojunction bipolar transistors

Abstract

In this letter, the influence of various emitter ledge thicknesses on the performances of InGaP∕GaAs heterojunction bipolar transistors is investigated based on the simulation and experimental data. The undesired surface channel phenomenon at the exposed base surface between base contact and emitter ledge is comprehensively analyzed. Moreover, improper thickness of emitter ledge passivations would cause serious surface recombination at the edge of emitter ledge. Therefore, the thickness of emitter ledge is a critical and should be carefully considered. From simulated and experimental results, the optimum emitter ledge thickness of InGaP∕GaAs heterojunction bipolar transistor is 100–200Å.

Temperature-Dependent Characteristics of a Pseudomorphic High Electron Mobility Transistor with Graded Triple Delta-Doped Sheets

“…In this work, a two-dimensional ͑2D͒ semiconductor simulation package Atlas was used to analyze dc and radio frequency ͑rf͒ characteristics of the studied device. 13,14 Five fundamental equations related to electron and hole current continuity, electron and hole concentrations, and the Poisson equation were employed to simulate device performance. Other important physical mechanisms were also included in this study, such as Fermi-Dirac statistics, Shockley-Read-Hall recombination, field-dependent mobility, and concentration-dependent mobility.…”