Two-Dimensional Binary Honeycomb Layer Formed by Ag and Te on Ag(111)

Shah, Jalil; Sohail, Hafiz Muhammad; Uhrberg, R. I. G.; Wang, Weimin

doi:10.1021/acs.jpclett.0c00123

Cited by 10 publications

(15 citation statements)

References 16 publications

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“…However, we did not find isolated AlSe islands, suggesting that they prefer to distribute over a large surface scale. Such a feature has also been observed for Te deposited on Ag (111) , and many other alloys. − These results also provide the proof of the atomically flat AlSe alloy on Al(111) surfaces, which is one of the advantages for AlSe to be used as substrates.…”

Section: Resultssupporting

confidence: 58%

“…Other than metal dichalcogenides, metal monochalcogenide alloys, synthesized by direct selenization or tellurization of metal substrates, are also emerging, such as CuSe, AgTe, and AgSe. − They exhibit abundant structural and physical properties. AgTe and AgSe display closed-packed atomic structures with a ( 3 × 3 ) structure.…”

Section: Introductionmentioning

confidence: 99%

“…AgTe and AgSe display closed-packed atomic structures with a ( 3 × 3 ) structure. In addition, several metal monochalcogenide alloys show structures of chains, for example, Te on the Cu(111) system with ( 2 3 × 3 ) Cu–Te chains. − Recent angle-resolved photoemission spectroscopy (ARPES) measurements have reported that CuSe and AgTe possess two-dimensional Dirac nodal line fermions (its Dirac point extends along the M – Γ – K high symmetry line, forming the Dirac nodal line), protected by the mirror reflection symmetry. ,, Moreover, chalcogen-based surface alloys are also promising substrates for epitaxial growth. For example, the CDW properties of TiSe 2 could be tuned by CuSe substrates .…”

Section: Introductionmentioning

confidence: 99%

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New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111)

et al. 2022

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Metal chalcogenides are a promising material for novel physical research and nanoelectronic device applications. Here, we systematically investigate the crystal structure and electronic properties of AlSe alloys on Al(111) using scanning tunneling microscopy, angle-resolved photoelectron spectrometry, and first-principle calculations. We reveal that the AlSe surface alloy possesses a closed-packed atomic structure. The AlSe surface alloy comprises two atomic sublayers (Se sublayer and Al sublayer) with a height difference of 1.16 Å. Our results indicate that the AlSe alloy hosts two hole-like bands, which are mainly derived from the in-plane orbital of AlSe (p x and p y ). These two bands located at about −2.22 ±0.01 eV around the Gamma point, far below the Fermi level, distinguished from other metal chalcogenides and binary alloys. AlSe alloys have the advantages of large-scale atomic flat terraces and a wide band gap, appropriate to serve as an interface layer for two-dimensional materials. Meanwhile, our results provide implications for related Al-chalcogen interfaces.

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Section: Resultssupporting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111)

et al. 2022

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“…The adsorption sites of Te adatoms were determined with the surrounding reference CO molecules adsorbed at the top sites of Ag(111) surface, as shown in Fig. 2 After the deposition of Te atoms on the Ag(111) surface, the following annealing process was performed to form the AgTe monolayer film [36][37] . A large-scale STM image of the formed AgTe monolayer is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Epitaxial fabrication of AgTe monolayer on Ag(111) and the sequential growth of Te film

et al. 2021

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Transition-metal chalcogenides (TMCs) materials have attracted increasing interest both for fundamental research and industrial applications. Among all these materials, twodimensional (2D) compounds with honeycomb-like structure possess exotic electronic structures. Here, we report a systematic study of TMC monolayer AgTe fabricated by direct depositing Te on the surface of Ag(111) and annealing. Few intrinsic defects are observed and studied by scanning tunneling microscopy, indicating that there are two kinds of AgTe domains and they can form gliding twin-boundary. Then, the monolayer AgTe can serve as the template for the following growth of Te film. Meanwhile, some Te atoms are observed in the form of chains on the top of the bottom Te film. Our findings in this work might provide insightful guide for the epitaxial growth of 2D materials for study of novel physical properties and for future quantum devices.

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“…Two-dimensional (2D) materials have drawn much attention in the past few years, owing to their novel physical and chemical properties and potential applications in various fields [1][2][3][4][5][6][7]. As a member of the 2D material family, monolayer transition metal mono chalcogenides (TMMs) have sparked tremendous interest in recent years [8][9][10][11][12][13][14][15][16][17]. Monolayer CuSe with graphene-like honeycomb lattice, a typical representative of 2D TMMs, had been theoretical predicted to possess 2D Dirac nodal line fermion (DNLF) protected by mirror reflection symmetry, making CuSe monolayer a new platform to study 2D DNLFs and potential applications in the field of high-speed low-dissipation devices [12,16].…”

Section: Introductionmentioning

confidence: 99%

Electronic properties of monolayer copper selenide with one-dimensional moiré patterns

Niu¹,

Lu²,

Geng³

et al. 2022

Preprint

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Strain engineering is a vital way to manipulate the electronic properties of two-dimensional (2D) materials. As a typical representative of transition metal mono-chalcogenides (TMMs), a honeycomb CuSe monolayer features with one-dimensional (1D) moiré patterns owing to the uniaxial strain along one of three equivalent orientations of Cu(111) substrates. Here, by combining low-temperature scanning tunneling microscopy/spectroscopy (STM/S) experiments and density functional theory (DFT) calculations, we systematically investigate the electronic properties of the strained CuSe monolayer on the Cu(111) substrate. Our results show the semiconducting feature of CuSe monolayer with a band gap of 1.28 eV and the 1D periodical modulation of electronic properties by the 1D moiré patterns. Except for the uniaxially strained CuSe monolayer, we observed domain boundary and line defects in the CuSe monolayer, where the biaxial-strain and strain-free conditions can be investigated respectively. STS measurements for the three different strain regions show that the first peak in conduction band will move downward with the increasing strain. DFT calculations based on the three CuSe atomic models with different strain inside reproduced the peak movement. The present findings not only enrich the fundamental comprehension toward the influence of strain on electronic properties at 2D limit, but also offer the benchmark for the development of 2D semiconductor materials.

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Two-Dimensional Binary Honeycomb Layer Formed by Ag and Te on Ag(111)

Cited by 10 publications

References 16 publications

New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111)

New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111)

Epitaxial fabrication of AgTe monolayer on Ag(111) and the sequential growth of Te film

Electronic properties of monolayer copper selenide with one-dimensional moiré patterns

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