Spin-polarized materials with Dirac features have sparked great scientific interest due to their potential applications in spintronics. But such a type of structure is very rare and none has been fabricated. Here, we investigate the already experimentally synthesized manganese fluoride (MnF 3 ) as a novel spin-polarized Dirac material by using first-principles calculations. MnF 3 exhibits multiple Dirac cones in one spin orientation, while it behaves like a large gap semiconductor in the other spin channel. The estimated Fermi velocity for each cone is of the same order of magnitude as that in graphene. The 3D band structure further reveals that MnF 3 possesses rings of Dirac nodes in the Brillouin zone. Such a spin-polarized multiple Dirac ring feature is reported for the first time in an experimentally realized material. Moreover, similar band dispersions can be also found in other transition metal fluorides (e.g., CoF 3 , CrF 3 , and FeF 3 ). Our results highlight a new interesting single-spin Dirac material with promising applications in spintronics and information technologies. DOI: 10.1103/PhysRevLett.119.016403 Ever since the spin and charge of one electron have been considered separately, it has been found that the spin current displays superior properties to the classical charge current in the field of information transmission such as high speed, low power consumption, and negligible energy dissipation [1]. Thus, the corresponding spin current has drawn great attention over the past few decades and the spin electronics are rapidly expanding [2][3][4][5][6][7][8][9][10][11]. Up to now, a number of spintronics materials have been proposed including magnetic metals, half-metallic ferromagnets, topological insulators, magnetic semiconductors, diluted magnetic semiconductors, etc. [12][13][14][15][16]. But to exploit the full potential of spintronics in information transfer and storage, some basic issues still remain, such as long distance spin transport, and the generation and injection of spin polarized currents [4,17,18]. In addition to them, the grand challenges for new generation spintronics are how to make electrons transport with ultrahigh speed and consume ultralow energy, which requires realizing massless electrons by discovering the potential Dirac band dispersion, and achieve dissipationless spin transport via generating large spin polarization around the Fermi level [19].It is necessary to emphasize that the well-studied materials for spintronics such as half-metals, can meet the "basic" demand of spintronics applications [20,21]. In addition, Wang [22] proposed a new class of materials named spin gapless semiconductors (SGS) that can generate 100% spin polarized current and is promising in spintronics. The SGS was then validated by Ouardi et al. in experiment [23]. However, to overcome the "grand challenge," the performances of half-metal and SGS are still limited as it just behaves like a metal-semiconductor in one spin orientation, but lacks linear Dirac dispersion, which can hardly reach t...