Two-dimensional calculation of spatial distribution of neutral atoms for a planar inductively coupled oxygen discharge

Yoon, Hyun Jin; Chung, Tae Hun; Chung, Chia-Ying; Lee, J.K.

doi:10.1016/j.tsf.2005.08.044

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…The model consists of an electromagnetic equation for the inductive electric field powering the plasma, an equation for the electron energy assuming Maxwellian electrons and continuity equations for charged (positive and negative ions) and neutral species including gas-phase and surface reactions. The present model is based on the fluid approximation, with the charged particle flux being further described by the drift-diffusion approximation and the neutral flux by the diffusion approximation [126,127]. These equations include a stiff system which involves both fast and slow timevarying phenomena, and so a modular approach is essential to overcome the disparate time scales associated with the transport and chemistry of electrons and heavy particles (ions and neutrals) in the plasma.…”

Section: Numerical Proceduresmentioning

confidence: 99%

Plasma chemical behaviour of reactants and reaction products during inductively coupled CF₄plasma etching of SiO₂

Fukumoto¹,

Fujikake

Takao³

et al. 2009

Plasma Sources Sci. Technol.

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A two-dimensional fluid model has been developed to study plasma chemical behaviour of etch products as well as reactants during inductively coupled CF 4 plasma etching of SiO 2 . The plasma fluid model consisted of Maxwell's equations, continuity equations for neutral and charged species including gas-phase and surface reactions and an energy balance equation for electrons. The surface reaction model assumed Langmuir adsorption kinetics with the coverage of fluorine atoms, fluorocarbon radicals and polymers on SiO 2 surfaces. Numerical results indicated that etch product species occupy a significant fraction of reactive ions as well as neutrals in the reactor chamber during etching, which in turn leads to a change in plasma and surface chemistry underlying the processing. In practice, the density of SiF 4 was typically about 10% of that of the feedstock CF 4 , being comparable to that of the most abundant fluorocarbon radical CF 2 ; moreover, the density of SiF + 3 was typically about 5% of that of the most abundant fluorocarbon ion CF + 3 . The density and the distribution of such product species in the reactor chamber were changed by varying the ion bombardment energy on the substrate surfaces, gas pressure, mass flow rate and coil configuration, which arises in part from gas-phase reactions depending on plasma electron density and temperature. Surface reactions on the chamber walls and on the substrate also affect the product density and distribution in the reactor; in particular, the surface reactions on the SiO 2 dielectric window as well as substrate surfaces were found to largely affect the product density and distribution.

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Section: Numerical Proceduresmentioning

confidence: 99%

Plasma chemical behaviour of reactants and reaction products during inductively coupled CF₄plasma etching of SiO₂

Fukumoto¹,

Fujikake

Takao³

et al. 2009

Plasma Sources Sci. Technol.

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show abstract

Simulation of an Ar/O₂/Cl₂magnetized direct current discharge

Zhao

et al. 2016

J. Phys. D: Appl. Phys.

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Two-dimensional calculation of spatial distribution of neutral atoms for a planar inductively coupled oxygen discharge

Cited by 2 publications

References 16 publications

Plasma chemical behaviour of reactants and reaction products during inductively coupled CF₄plasma etching of SiO₂

Plasma chemical behaviour of reactants and reaction products during inductively coupled CF₄plasma etching of SiO₂

Simulation of an Ar/O₂/Cl₂magnetized direct current discharge

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Two-dimensional calculation of spatial distribution of neutral atoms for a planar inductively coupled oxygen discharge

Cited by 2 publications

References 16 publications

Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4plasma etching of SiO2

Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4plasma etching of SiO2

Simulation of an Ar/O2/Cl2magnetized direct current discharge

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Product

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Plasma chemical behaviour of reactants and reaction products during inductively coupled CF₄plasma etching of SiO₂

Plasma chemical behaviour of reactants and reaction products during inductively coupled CF₄plasma etching of SiO₂

Simulation of an Ar/O₂/Cl₂magnetized direct current discharge