2019
DOI: 10.1002/aisy.201900052
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Two‐Dimensional Conjugated Microporous Polymer with Structural Stability and Electrical Bistability for Rectifying Memory Array

Abstract: Rectifying memory is an effective strategy to solve the cross-talk issues of crossbar switch architecture during the integration procedure for high-density data storage. Herein, a two-dimensional (2D) conjugated microporous polymer (CMP) is proposed as an ideal resistive switching medium for integrated rectifying memory devices. Large-area 2D CMP film is prepared using a surfaceconfined polymerization method, featuring rewritable nonvolatile memory with a low set voltage in a graphene/CMP/metal diode. Importan… Show more

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Cited by 9 publications
(7 citation statements)
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“…As is well known, multilayer organic frameworks always suffer from inferior performance or device failure stemming from erosion during a layer-by-layer process. One conventional strategy to avoid this erosion is applying blending polymers containing photoresistors for photo-triggered-cross-linking reaction, which demonstrates much complexity during the subsequent photolithography process . Accordingly, an oil-soluble polymer P3HT and a water-soluble polymer PVA were employed as the memory medium and selector medium, respectively.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…As is well known, multilayer organic frameworks always suffer from inferior performance or device failure stemming from erosion during a layer-by-layer process. One conventional strategy to avoid this erosion is applying blending polymers containing photoresistors for photo-triggered-cross-linking reaction, which demonstrates much complexity during the subsequent photolithography process . Accordingly, an oil-soluble polymer P3HT and a water-soluble polymer PVA were employed as the memory medium and selector medium, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…One conventional strategy to avoid this erosion is applying blending polymers containing photoresistors for photo-triggered-cross-linking reaction, which demonstrates much complexity during the subsequent photolithography process. 52 Accordingly, an oil-soluble polymer P3HT and a water-soluble polymer PVA were employed as the memory medium and selector medium, respectively. Benefiting from the intrinsic resistance against water, the spin-coated bottom P3HT layer (memory element) was conformal during and after the spun cast of the top PVA layer (selective element), and no diffusion of metal atoms from electrode deposition into the polymer layers was observed in accordance with the cross-sectional scanning transmission electron microscopy (STEM) image (left panel in Figure 4b).…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Huang et al [202] designed and constructed a resistive memristor based on a large area 2D CMP film synthesized from surface-confined polymerization, featuring rewritable nonvolatile memory with a low set voltage in a graphene/CMP/metal diode. By assembling the solution-processable all-polymer one diode-one resistor (1D1R) cross-bar memory array by directly stacking the CMP memristor with a poly(3-hexylthiophene) rectifier, the sandwich structured CMP device exhibited nonvolatile flash performance, with features of low set voltage (≈1.65 V), stable cycling endurance (>25 cycles), and long retention time (10 4 s).…”
Section: Resistive Memorymentioning
confidence: 99%
“…Notably, to get neat films, the substrates are recommended to be placed vertically or face-down because the bulk particles of COF can be also obtained during the reaction. So far, COF film growth has been achieved on various substrates, such as 2D materials (graphene, , rGO, hBN), metal oxide (ITO, ZnO), metal, and glass . Mostly, the COF layers are stacked and accumulated in the direction parallel to the substrate surface to form a vertically orientated film.…”
mentioning
confidence: 99%
“…COF-based resistive switching memories generally possess a metal–insulator–metal (MIM) device structure that enables resistance (conductance) switching between high-resistance state (HRS) and low-resistance state (LRS), demonstrating a nonvolatile memory behavior. , ,, Such simple device architectures facilitate further scaling-down with a crossbar array geometry for high-intensity integration, which is promising for high-density data storage and neuromorphic applications. Generally, the resistance switching mechanisms in organic materials are explained by conductive filament, charge trapping/detrapping, charge transfer, redox reaction, and conformation change …”
mentioning
confidence: 99%