Two-Dimensional Cross-Sectional Doping Profile Study of Low Energy High Dose Ion Implantations Using High Vacuum Scanning Spreading Resistance Microscopy (HV-SSRM) and Electron Holography

Abstract

Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling Abstract. High vacuum scanning spreading resistance microscopy (HV-SSRM) and electron holography (EH) methods are used to study two-dimensional (2D) cross-sectional doping profiles of low energy high dose ion implantations including conventional beam-line 75 As implant and AsH 3 plasma doping (PLAD). Both methods show quantitative definition of junction depths x j in vertical and lateral directions, and have been demonstrated to be powerful techniques for 2D doping profiling study. It has been found that AsH 3 PLAD with -10kV voltage and 1×10 16 /cm 2 dose shows slightly deeper junction depth x j , both of vertical x j (V) and lateral x j (L) and with slightly larger x j (L)/x j (V) ratio than beam-line 75 As implant with 10keV energy and 8×10 15 /cm 2 dose. Good correlations among 2D HV-SSRM doping profiles, 2D EH doping profiles, 2D doping profile simulation, and 1D SIMS/ARXPS As profiles have been demonstrated. Very good correlation between 2D doping profiles and device parameters has been demonstrated.