Two-dimensional dose and focus-error measurement technology for exposure tool management in half-pitch 3x generation

Fukazawa, Kazuhiko; Kudo, Yuji; Fujimori, Yoshihiko; Yoshino, Kiminori; Yamazaki, Yuichiro

doi:10.1117/12.813937

Cited by 2 publications

(6 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Data handling of the new method is different from the previous method [1]. In this paper, method and test results are described for diffraction case only, but diffraction can be replaced by crossed-Nicol optics according to the pattern types and inspection purposes.…”

Section: Conceptmentioning

confidence: 96%

“…We already presented quick focus and dose measurement method by detecting polarization status changes with crossed-Nicol optics [1]. The method is efficient for dense L/S (Line and Space) patterns.…”

Section: Solution With Amimentioning

confidence: 99%

“…Approximate the diffraction-focus relation by polynomial expressions, as seen in(1). Where y is diffraction signal, x is focus offset, and A, B, C, D and E is the coefficient of the expression.…”

mentioning

confidence: 99%

See 2 more Smart Citations

New exposure tool management technology with quick focus measurement in half pitch 22nm generation

et al. 2010

Self Cite

View full text Add to dashboard Cite

We have developed the new technology to measure focus variations in a field or over the wafer quickly for exposure tool management. With the new technology, 2-dimensional image(s) of the whole wafer are captured with diffraction optics, and by analyzing the image signal(s), we are able to get a focus map in an exposure field or over the entire wafer. Diffraction-focus curve is used instead of a CD-focus curve to get the focus value from the image signal(s). The measurements on the production patterns with the production illumination conditions are available. We can measure the field inclination and curvature from the focus map. The performance of the new method was confirmed with a test pattern and production patterns.

show abstract

Section: Conceptmentioning

confidence: 96%

Section: Solution With Amimentioning

confidence: 99%

See 1 more Smart Citation

New exposure tool management technology with quick focus measurement in half pitch 22nm generation

et al. 2010

Self Cite

View full text Add to dashboard Cite

show abstract

“…The AMI5700 (Nikon, Japan), which is an automatic macro inspection device, is used to capture images of wafers through diffracted/reflected light. [1][2][3] The imaging modes are categorized into three types: a) diffraction/reflection mode, b) PER mode, and c) Stokes mode, which are described with the schematics of the optics in Figure 2.…”

Section: Optical Conditionsmentioning

confidence: 99%

“…We have developed a high-resolution, high-precision CD optical metrology technique that leverages the correlation between the CD and signals of optically captured images of the entire wafer at once. [1][2][3] The platform is the AMI5700, an automatic macro defect inspection system. This technique enables the acquisition of CD distribution data in just a few minutes, achieving a remarkable resolution of over 100,000 points across the wafer.…”

Section: Introductionmentioning

confidence: 99%

Technology for high density CD measurement of EUV-processed resist patterns across a wafer ensuring high throughput and precision

Matsukata,

Fukazawa,

Hirukawa

et al. 2024

Metrology, Inspection, and Process Control XXXVIII

View full text Add to dashboard Cite

With the advancement of semiconductor device miniaturization, the critical dimension (CD) has reached several tens of nanometers. To meet high yield demands, strict CD control is crucial. However, conventional CD measurement methods such as SEM and scatterometry have a problem; the measurement time increases in proportion to the number of measurement points. To solve this problem, we have developed a CD measurement technology that enables high density measurement of more than 100,000 points on the wafer surface in a few minutes per wafer. 1 The CD value is calculated from the correlation between the diffracted light signal and CD.Despite the advantages this method provides, there still have been challenges. Measuring the critical dimensions of resist patterns of several tens of nanometers formed in EUV lithography across the entire wafer sometimes poses difficulties due to insufficient sensitivity with diffracted light, making high-precision CD measurement difficult.In this paper, we propose an enhanced measurement technique that quantifies the changes in the polarization state of diffracted light and reflected light from the wafer as Stokes parameters and calculates the CD based on the correlation between the obtained Stokes parameters and the CD value. Theoretically, it is sensitive to resist patterns of a few nanometers. For accuracy verification, we measured next-generation DRAM process wafers, including EUV-processed wafers. The minimum of measurement error, which compared with the CD value measured by SEM, achieved to 3σ = 0.57. The total time for wafer measurement and calculation processing was about a few minutes per wafer for over 10,000 points on the wafer surface.

show abstract

Two-dimensional dose and focus-error measurement technology for exposure tool management in half-pitch 3x generation

Cited by 2 publications

References 0 publications

New exposure tool management technology with quick focus measurement in half pitch 22nm generation

New exposure tool management technology with quick focus measurement in half pitch 22nm generation

Technology for high density CD measurement of EUV-processed resist patterns across a wafer ensuring high throughput and precision

Contact Info

Product

Resources

About