Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

Liu, Zhetong; Liu, Bingyao; Chen, Zhaolong; Yang, Shenyuan; Liu, Zhiqiang; Wei, Tongbo; Gao, Peng; Liu, Zhongfan

doi:10.1360/nso/20220068

Cited by 3 publications

(1 citation statement)

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“…Additionally, the weak van der Waals interactions and lack of dangling bonds on TMD surfaces might help to manage stress between the epitaxial layer and substrate, known as van der Waals epitaxy. It means the 2D material completely screens the substrate potential and substitutes the role of the substrate such that the epitaxial layer nucleates and grows directly on the 2D material rather than the underlying substrate [ 10 ]. Therefore, van der Waals (vdW) epitaxy on two-dimensional (2D) materials has opened a new opportunity for epitaxial growth, overcoming the material’s compatibility issue [ 11 ], which also could provide a freestanding and high-quality nanomembrane for massive novel applications [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS2 Layers by Plasma-Assisted Molecular Beam Epitaxy

Susanto,

Liu,

et al. 2024

Nanomaterials

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The van der Waals epitaxy of wafer-scale GaN on 2D MoS2 and the integration of GaN/MoS2 heterostructures were investigated in this report. GaN films have been successfully grown on 2D MoS2 layers using three different Ga fluxes via a plasma-assisted molecular beam epitaxy (PA-MBE) system. The substrate for the growth was a few-layer 2D MoS2 deposited on sapphire using chemical vapor deposition (CVD). Three different Ga fluxes were provided by the gallium source of the K-cell at temperatures of 825, 875, and 925 °C, respectively. After the growth, RHEED, HR-XRD, and TEM were conducted to study the crystal structure of GaN films. The surface morphology was obtained using FE-SEM and AFM. Chemical composition was confirmed by XPS and EDS. Raman and PL spectra were carried out to investigate the optical properties of GaN films. According to the characterizations of GaN films, the van der Waals epitaxial growth mechanism of GaN films changed from 3D to 2D with the increase in Ga flux, provided by higher temperatures of the K-cell. GaN films grown at 750 °C for 3 h with a K-cell temperature of 925 °C demonstrated the greatest crystal quality, chemical composition, and optical properties. The heterostructure of 3D GaN on 2D MoS2 was integrated successfully using the low-temperature PA-MBE technique, which could be applied to novel electronics and optoelectronics.

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Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS2 Layers by Plasma-Assisted Molecular Beam Epitaxy

Susanto,

Liu,

et al. 2024

Nanomaterials

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Control of growth kinetics during remote epitaxy of complex oxides on graphene by pulsed laser deposition

Wohlgemuth,

Trstenjak,

Sarantopoulos

et al. 2024

APL Materials

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Remote epitaxy through 2D materials opens new opportunities for research and application, overcoming some limitations of classical epitaxy and allowing the creation of freestanding layers. However, using graphene as a 2D interlayer for remote epitaxy of metal oxides is challenging, particularly when carried out by pulsed laser deposition (PLD). The graphene layer can be easily oxidized under the typically applied high oxygen pressures, and the impact of highly kinetic particles of the plasma plume can lead to severe damages. In this study, both aspects are addressed: Argon is introduced as an inert background gas in order to avoid oxidation and to reduce the kinetic impact of the plasma species on graphene. The laser spot size is minimized to control the plasma plume and particle flux. As a model system, strontium titanate (STO) is quasi-homoepitaxially grown on graphene buffered STO single crystals. Raman spectroscopy is performed to evaluate the 2D, G, and D band fingerprints of the graphene layer and to assess the defect structure of the interlayer after the deposition. Our results prove that control of the growth kinetics by reducing the laser spot size and by using high argon pressures provides a key strategy to conserve graphene with a low defect density during PLD while allowing a layer-by-layer growth of structurally coherent oxide layers. This strategy may be generalized for the PLD remote epitaxy of many complex oxides, opening the way for integrating 2D materials with complex oxides using widely accessible PLD processes.

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Sub-1-nm-node beyond-silicon materials and devices: Pathways, opportunities and challenges

Zhang¹

2023

NSO

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Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

Cited by 3 publications

References 93 publications

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS2 Layers by Plasma-Assisted Molecular Beam Epitaxy

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS2 Layers by Plasma-Assisted Molecular Beam Epitaxy

Control of growth kinetics during remote epitaxy of complex oxides on graphene by pulsed laser deposition

Sub-1-nm-node beyond-silicon materials and devices: Pathways, opportunities and challenges

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