Two‐dimensional Materials for Electronic Applications

Zhang, Haimeng; Wang, Han

doi:10.1002/9783527811861.ch3

Cited by 2 publications

(1 citation statement)

References 194 publications

(221 reference statements)

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“…Direct-coupled FET logic is well suited for noisy environments and long-distance communication. The versatility of this device is enhanced by its ability to function with diverse supply voltages across various applications [31,62,63]. In this inverter configuration, the four electrode terminals are fabricated as input gate voltage (V IN ), output voltage (V OUT ), drain voltage (V DD ), and ground (GND).…”

Section: Integrated Logic Circuits Characteristicsmentioning

confidence: 99%

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Lee,

Yoon,

Hwang

et al. 2023

Nanomaterials

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Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, the local back-gate-based MoS2 transistors on a silicon substrate can lead to the degradation of electrical characteristics. This degradation is caused by the abnormal effect of gate sidewalls, leading to non-uniform field controllability. Therefore, the buried-gate-based MoS2 transistors where the gate electrodes are embedded into the silicon substrate are fabricated. The several device parameters such as field-effect mobility, on/off current ratio, and breakdown voltage of gate dielectric are dramatically enhanced by field-effect mobility (from 0.166 to 1.08 cm2/V·s), on/off current ratio (from 4.90 × 105 to 1.52 × 107), and breakdown voltage (from 15.73 to 27.48 V) compared with a local back-gate-based MoS2 transistor, respectively. Integrated logic circuits, including inverters, NAND, NOR, AND, and OR gates, were successfully fabricated by 2-inch wafer-scale through the integration of a buried-gate MoS2 transistor array.

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Section: Integrated Logic Circuits Characteristicsmentioning

confidence: 99%

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Lee,

Yoon,

Hwang

et al. 2023

Nanomaterials

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show abstract

Stable Al₂O₃ Encapsulation of MoS₂‐FETs Enabled by CVD Grown h‐BN

Piacentini

Marian

Schneider

et al. 2022

Adv Elect Materials

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Molybdenum disulfide (MoS2) has great potential as a two‐dimensional semiconductor for electronic and optoelectronic application, but its high sensitivity to environmental adsorbents and charge transfer from neighboring dielectrics can lead to device variability and instability. Aluminum oxide (Al2O3) is widely used as an encapsulation layer in (opto)‐electronics, but it leads to detrimental charge transfer n‐doping to MoS2. Here, this work reports a scalable encapsulation approach for MoS2 field‐effect transistors (FETs) where hexagonal boron nitride (h‐BN) monolayers are employed as a barrier layer in‐between each of the Al2O3 and MoS2 interfaces. These devices exhibit a significant reduction of charge transfer, when compared to structures without h‐BN. This benefit of h‐BN in the gate stack is confirmed by ab initio density functional theory calculations. In addition, the devices with h‐BN layers show very low hysteresis even under ambient operating conditions.

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Two‐dimensional Materials for Electronic Applications

Cited by 2 publications

References 194 publications

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Stable Al₂O₃ Encapsulation of MoS₂‐FETs Enabled by CVD Grown h‐BN

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Two‐dimensional Materials for Electronic Applications

Cited by 2 publications

References 194 publications

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN

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Stable Al₂O₃ Encapsulation of MoS₂‐FETs Enabled by CVD Grown h‐BN