Two-dimensional materials for next-generation computing technologies

Liu, Chunsen; Chen, Huawei; Wang, Shuiyuan; Liu, Qi; Jiang, Yu‐Gang; Zhang, David Wei; Liu, Ming; Zhou, Peng

doi:10.1038/s41565-020-0724-3

Cited by 695 publications

(510 citation statements)

References 128 publications

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“…22 2D layered semiconductors with atomic thickness possess the potential for continuous shrinking, [23][24][25] which is a promising candidate for future high-density memory and computing systems. 26,27 Particularly, 2D layered α-In2Se3 exhibits robust ferroelectricity at room temperature (RT) without annealing, 14,28,29 and thanks to the intrinsic interlocking of dipoles in α-In2Se3, 18,22 it can maintain ferroelectric polarization even at atomic scale.…”

Section: Abstract: 2d α-In2se3 Ferroelectric Channel Non-volatile Mmentioning

confidence: 99%

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Wang

Liu

Gan

et al. 2020

Preprint

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With the advent of big data era, applications are more data-centric, and energy efficiency issues caused by frequent data interactions due to the physical separation of memory and computing will become more severe. Emerging technologies have been proposed to perform analog computing with memory to address the dilemma. Ferroelectric memory has become a promising technology due to field-driven fast switching and non-destructive readout, but endurance and miniaturization are limited. Here, we demonstrate the α-In2Se3 ferroelectric semiconductor channel device that integrates non-volatile memory (NVM) and neural computation functions. Remarkable performance includes NVM ultra-fast write speed of 40ns, improved endurance through internal electric field, flexible adjustment of neural plasticity, energy consumption as low as 40fJ per event, and thermally modulated 94.74% high-precision iris recognition classification simulation. This prototypical demonstration laid the foundation for an integrated memory computing system with high density and energy efficiency.

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Section: Abstract: 2d α-In2se3 Ferroelectric Channel Non-volatile Mmentioning

confidence: 99%

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Wang

Liu

Gan

et al. 2020

Preprint

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“…Distinct from their bulk materials, 2D vdW materials exhibit many novel physical phenomena. Some 2D materials have already shown great potential for the engineering of next-generation 2D spintronic devices [10][11][12]. For example, graphene exhibits high electron/hole mobility, long spin lifetimes, and long diffusion lengths, which make it a promising candidate for a spin channel [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Two-Dimensional Spintronics

Xiang

2020

Nanoscale Res Lett

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Spintronics is the most promising technology to develop alternative multi-functional, high-speed, low-energy electronic devices. Due to their unusual physical characteristics, emerging two-dimensional (2D) materials provide a new platform for exploring novel spintronic devices. Recently, 2D spintronics has made great progress in both theoretical and experimental researches. Here, the progress of 2D spintronics has been reviewed. In the last, the current challenges and future opportunities have been pointed out in this field.

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confidence: 99%

“…However, the conventional doping process such as ion implantation becomes increasingly difficult as the device dimensions decrease, and building CMOS logics with discrete p-and ndoped transistors complicates the device manufacturing process and limits the miniaturization of the circuits [1][2][3][4] . Meanwhile, with the booming demand of information processing capability, the traditional computing systems based on von Neumann architecture are encountering great challenges, due to the separation of computing and memory units [4][5][6][7] . Reconfigurable devices with modifiable operating states or multiple functions are quite meaningful for the miniaturization of circuits, by reducing the number of devices, promoting the integration of circuits, and endowing the circuits with versatility 2, [8][9][10] .…”

mentioning

confidence: 99%

“…Reconfigurable devices with modifiable operating states or multiple functions are quite meaningful for the miniaturization of circuits, by reducing the number of devices, promoting the integration of circuits, and endowing the circuits with versatility 2, [8][9][10] . In addition, neural-like electronic devices and neuromorphic computing that mimics the human brain provide an efficient information processing method [4][5][6][11][12][13][14][15][16] . Nevertheless, this also places higher demands on the functions of devices and circuits 8,17 .…”

mentioning

confidence: 99%

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Reconfigurable Multifunctional Ambipolar Polymer Transistors with Improved Switching-off Capability Upon Non-Uniformly Distributed Compensation Potential

Wei

Wang

et al. 2020

Preprint

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Ambipolar field-effect transistors allowing both holes and electrons transport can work in different states, which are attractive for simplifying the device manufactures and miniaturizing the integrated circuits. However, conventional ambipolar transistors intrinsically suffer from poor switching-off capability because the gate electrode is not able to simultaneously deplete holes and electrons across the entire transport channel. Here, we show that the switching-off capability of polymer ambipolar transistor is largely improved by up to 3 orders, through introducing non-uniformly distributed compensation potentials along the channel to synchronically tune the charge transport at different channel locations. Non-uniformly gate-stressed conjugated-polymer@insulator blend film induces non-uniformly trapped charges in the insulators, which consequently generates non-uniform compensation electrical field imposed in the conjugated-polymers. Both n-type and p-type operations with high mobility (2.2 and 0.8 cm2s-1V-1 respectively) and high on/off ratio (105) are obtained in the same device, and the device states are reversibly switchable, which provides a new strategy for three-level non-volatile memories and artificial synapses.

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Two-dimensional materials for next-generation computing technologies

Cited by 695 publications

References 128 publications

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Recent Advances in Two-Dimensional Spintronics

Reconfigurable Multifunctional Ambipolar Polymer Transistors with Improved Switching-off Capability Upon Non-Uniformly Distributed Compensation Potential

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