without using the via-hole process, and we can also reduce the size of the device by the insertion of a slow-wave structure without changing the device performance. Therefore, by integrating the passive MEMS component using DAMLs on the GaAs MMICs, we are able to reduce size while achieving good performance.
CONCLUSIONIn this study, we fabricated a new GaAs-based dielectric-supported air-gap microstripline (DAML) structure using surface MEMS technology as well as a hybrid ring coupler in order to prove the fabrication potential of various passive components at high frequency. The hybrid ring coupler fabricated by the DAMLs exhibited S 31 of 3.64 dB and S 21 of 3.38 dB around the 60-GHz center frequency. We also obtained S 11 of more than 20 dB, S 41 of more than 20 dB at 58 GHz, and a phase difference between ports 2 and 3 of 180 Ϯ 2°near the center frequency for the proposed rat-race coupler fabricated using the DAMLs. The measured results reveal that the total size of the hybrid ring coupler decreases by about 33% without a decrease in the performance of the hybrid ring coupler, when we fabricated the rat-race coupler with a slow-wave structure.
ACKNOWLEDGMENTS
EFFECTS OF REDUCED CONTRAST