Two dimensional NbSe2/Nb2O5 metal–semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility

Xu, Xiang; Lu, Chunhui; Wang, Ying; Liu, Zenghui; Zhang, Ying; Hua, Dengxin

doi:10.1039/d3nh00172e

Cited by 9 publications

(5 citation statements)

References 60 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This suggests that there are fewer carrier trap states between the Fermi level and the conduction band edge, and the photogenerated charge pairs are less impeded during their efficient motion in the InSe material. This is a better linear fit compared to previous results. − Moreover, the photosensitivity LDR was calculated to be 75 dB according to the equation of LDR = 20 log (I ph /I dark ) . The relatively high LDR means stable responsiveness from low to high light ranges and is expected to be used in high-sensitivity photodetection applications.…”

mentioning

confidence: 77%

Realizing Ultrafast Response Speed for Self-Powered Photodetectors with a Molecular-Doped Lateral InSe Homojunction

Fan,

He,

Feng

et al. 2024

J. Phys. Chem. Lett.

View full text Add to dashboard Cite

The implementation of energy-saving policies has stimulated intensive interest in exploring self-powered optoelectronic devices. The 2D p-n homojunction exhibits effective generation and separation of carriers excited by light, realizing lower power consumption and higher performance photodetectors. Here, a self-powered photodetector with high performance is fabricated based on an F4-TCNQ localized molecular-doped lateral InSe homojunction. Compared with the intrinsic InSe photodetector, the switching light ratio (I light/I dark) of the p-n homojunction device can be enhanced by 2.2 × 104, and the temporal response is also dramatically improved to 24/30 μs. Benefiting from the built-in electric field, due to the formation of an InSe p-n homojunction after partial doping of F4-TCNQ on InSe, the device possesses a high responsivity (R) of 93.21 mA/W, with a specific detectivity (D*) of 1.14 × 1011 Jones. These results suggest a promising approach to get a lateral InSe p-n homojunction and reveal the potential application of the device for next generation low-consumption photodetectors.

show abstract

mentioning

confidence: 77%

Realizing Ultrafast Response Speed for Self-Powered Photodetectors with a Molecular-Doped Lateral InSe Homojunction

Fan,

He,

Feng

et al. 2024

J. Phys. Chem. Lett.

View full text Add to dashboard Cite

show abstract

“…The full fabrication process flow of our VPDs starting from material growth is schematically illustrated in Figure . In contrast to the previously reported photodetectors fabricated by complicated patterning and expensive deposition techniques, our device processing is very simple and cost effective. First, the obtained CdS x Se 1– x NRs and PbI 2 NSs were individually dispersed and cleaned in ethanol.…”

Section: Fabrication Of Vertically Stacked Cds X Se1–x Nr/pbi2 Ns Hy...mentioning

confidence: 99%

Broadband Flexible Photodetectors Based on CdS_xSe_1–x/PbI₂ Heterojunctions

Nawaz,

Gulzar,

ul Hasan

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

2D photodetectors can considerably outperform their Si counterparts and thus appear promising for contemporary optoelectronic circuits. However, limited charge separation efficiency and poor optical absorption make it complicated to create ultrasensitive broad response photodetectors using a single 2D material. While hybrid heterostructures combining 2D and 1D materials could be a promising solution, previously used binary/binary 1D/2D photodetectors have a performance that is merely satisfactory at best. To address these limitations, here we for the first time demonstrate vertically stacked ternary/binary photodetectors (VPDs) based on 1D ternary CdS x Se 1−x nanoribbon (NR)/2D binary PbI 2 nanosheets (NS) heterostructures. While excellent crystallinity of the ternary/binary structure enables efficient carrier transport, a type-II heterojunction at the interfaces facilitates charge separation. As a result, our devices exhibit excellent photodetection ability in broad range with superior photoresponsivity (567 A/W), photosensitivity (1.60 × 10 7 %), specific detectivity (1.96 × 10 15 Jones), external quantum efficiency (1.17 × 10 5 %), and the response speed which is several orders of magnitude higher as compared to our reference devices based on PbI 2 NS and most of the previously reported photodetectors in visible range. Furthermore, our VPDs fabricated on flexible substrates show stable operation after being subjected to multiple bending cycles and retain excellent performance following several weeks of storage in an air environment. Our results provide advanced insights into the design and fabrication of environmentally stable flexible VPDs for future optoelectronics circuits.

show abstract

Section: Heterostructurementioning

confidence: 99%

“…shows the possibility of tuning the interface barrier and contact resistance by constructing heterostructures. Xu [30] synthesized size-dependent NbSe 2 /Nb 2 O 5 NSs by an LPE method with a gradient centrifugation strategy. PEC tests exhibit a special phenomenon where the photocurrent increases with increasing light irradiation time, which may be due to the oxygen-sensitized pho-toconduction (OSPC) mechanism (the four processes involved are shown in Figure 12c).…”

Section: Heterostructurementioning

confidence: 99%

See 1 more Smart Citation

The Rise of 2D Materials‐Based Photoelectrochemical Photodetectors: Progress and Prospect

Zhou,

Zhang,

Liu

et al. 2024

Advanced Optical Materials

View full text Add to dashboard Cite

Abstract2D materials have garnered significant research attention due to their unique electrical and optical properties. Various photodetectors (PDs) based on 2D materials have been demonstrated to possess a high photoresponse, achieve specific light detection, and construct flexible devices. Among these, photoelectrochemical‐type (PEC) PDs are attracting increasing attention due to their facile fabrication processes, self‐powered capability, and high sensitivity. Compared with transitional solid‐state PDs based on 2D materials, research on 2D material‐based PEC PDs is still in its initial stages but exhibits promising potential for various applications. This paper comprehensively reviews recent advancements in 2D material‐based PEC PDs. The 2D materials for PEC PDs are first classified, and then the synthesis methods employed for their fabrication are briefly summarized. Later, the performance and performance optimization strategies of various 2D material‐based PEC PDs are discussed. Finally, the challenges and opportunities for developing high‐performance 2D material‐based PEC PDs are highlighted.

show abstract

Two dimensional NbSe₂/Nb₂O₅ metal–semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility

Abstract: Two-dimensional (2D) metal-semiconductor heterostructures are promising for high-performance optoelectronic devices due to its fast carrier separation and transportation. Considering superior metallic characteristics accompanied with high electrical conductivity in NbSe2, surface...

Cited by 9 publications

References 60 publications

Realizing Ultrafast Response Speed for Self-Powered Photodetectors with a Molecular-Doped Lateral InSe Homojunction

Realizing Ultrafast Response Speed for Self-Powered Photodetectors with a Molecular-Doped Lateral InSe Homojunction

Broadband Flexible Photodetectors Based on CdS_xSe_1–x/PbI₂ Heterojunctions

The Rise of 2D Materials‐Based Photoelectrochemical Photodetectors: Progress and Prospect

Contact Info

Product

Resources

About

Two dimensional NbSe2/Nb2O5 metal–semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility

Abstract: Two-dimensional (2D) metal-semiconductor heterostructures are promising for high-performance optoelectronic devices due to its fast carrier separation and transportation. Considering superior metallic characteristics accompanied with high electrical conductivity in NbSe2, surface...

Cited by 9 publications

References 60 publications

Realizing Ultrafast Response Speed for Self-Powered Photodetectors with a Molecular-Doped Lateral InSe Homojunction

Realizing Ultrafast Response Speed for Self-Powered Photodetectors with a Molecular-Doped Lateral InSe Homojunction

Broadband Flexible Photodetectors Based on CdSxSe1–x/PbI2 Heterojunctions

The Rise of 2D Materials‐Based Photoelectrochemical Photodetectors: Progress and Prospect

Contact Info

Product

Resources

About

Two dimensional NbSe₂/Nb₂O₅ metal–semiconductor heterostructure-based photoelectrochemical photodetector with fast response and high flexibility

Broadband Flexible Photodetectors Based on CdS_xSe_1–x/PbI₂ Heterojunctions