Two Dimensional Numerical Modeling and Simulation of a Uniformly doped GaAs MESFET Photodetector

Balasubadra, K.; Arulmary, A.; Rajamani, V.; Sankaranarayanan, K.

doi:10.1515/joc.2008.29.4.194

Cited by 4 publications

(2 citation statements)

References 15 publications

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“…At present, the Ga 2 O 3 -based MESFETs have been constructed by employing various methods [27][28][29], while the applications in solar-blind photodetection are less reported, to the best of our current knowledge. According to photo response performances of the GaAs [30], ZnO [31], GaN [32] and diamond [33,34] based MESFET photodetectors, such an easily fabricated MESFET-based photodetector may well show high PDCR and low dark current (I dark ), due to advantages of controlling the current by gate voltages and drain voltages, independently [35,36]. Moreover, Si dopant has impressive modifications on optical and electrical properties of Ga 2 O 3 [37].…”

Section: Introductionmentioning

confidence: 99%

Enhancement-mode normally-off β-Ga₂O₃:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

Liu

Zhang

Yang

et al. 2021

Semicond. Sci. Technol.

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In this work, a solar-blind ultraviolet (UV) photodetector based on a three-terminal enhancement-mode (E-mode) Si-doped β-Ga2O3 (β-Ga2O3:Si) metal-semiconductor field-effect transistor structure is demonstrated, whose threshold voltage (V th) and subthreshold swing are 4.04 V and 1.4 V dec−1, respectively. A 400 nm thick β-Ga2O3:Si thin film is prepared on sapphire substrate by using metal-organic chemical vapor deposition method. Controlling the channel currents by the Schottky gate voltage in the dark and under illuminations, the photodetector shows dark current (I dark) as low as 13.4 pA, photo-to-dark current ratio of 4.85 × 104 and linear dynamic range of 29.6 dB, illuminated by 254 nm UV light of 245 μW cm−2. As the UV light is turned on and off, the output current rise and decay time (τ r and τ d) are 420 ms and 350 ms. Moreover, at drain voltage (V ds) of 5 V and gate voltage (V gs) of 0 V, the responsivity (R), specific detectivity (D*) and external quantum efficiency are achieved as 74 A W−1, 2.15 × 1014 cm Hz1/2 W−1 (Jones) and 3.6 × 104%, respectively.

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Section: Introductionmentioning

confidence: 99%

Enhancement-mode normally-off β-Ga₂O₃:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

Liu

Zhang

Yang

et al. 2021

Semicond. Sci. Technol.

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“…At present, optical fiber communication plays an important role in cable communication technology for wideband, multimedia and high-speed applications [1]. The fundamental physical mechanism behind optical illumination is the absorption of photons in the valence band of the material thereby creating electrons and holes.…”

Section: Introductionmentioning

confidence: 99%

IV and Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods

Lohani¹,

Gaitonde²

2011

IJCA

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OPFET (Optical Field Effect Transistor) is a useful device for optical communication and as photo detector. In this paper, the I-V characteristics of the back illuminated OPFET are plotted using finite difference methods by solving the without time dependent continuity equations in which the incident radiation is allowed to enter through the substrate by inserting a fiber partially into the substrate. The switching time of the device has also been plotted. General TermsPerformance, Theory.

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Operating Frequency Ranges of GaAs Back-Illuminated OPFET Detector

Gaitonde

Lohani

2018

2018 International Conference on Computational and Characterization Techniques in Engineering &Amp; Sciences (CCTES)

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Two Dimensional Numerical Modeling and Simulation of a Uniformly doped GaAs MESFET Photodetector

Cited by 4 publications

References 15 publications

Enhancement-mode normally-off β-Ga₂O₃:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

Enhancement-mode normally-off β-Ga₂O₃:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

IV and Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods

Operating Frequency Ranges of GaAs Back-Illuminated OPFET Detector

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Two Dimensional Numerical Modeling and Simulation of a Uniformly doped GaAs MESFET Photodetector

Cited by 4 publications

References 15 publications

Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

IV and Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods

Operating Frequency Ranges of GaAs Back-Illuminated OPFET Detector

Contact Info

Product

Resources

About

Enhancement-mode normally-off β-Ga₂O₃:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

Enhancement-mode normally-off β-Ga₂O₃:Si metal-semiconductor field-effect deep-ultraviolet phototransistor