Two Dimensional Numerical Simulation of Zinc Oxy-Nitride Thin Film Transistors

Anjana, J G; Anand, Venu

doi:10.1109/icesc48915.2020.9155954

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2022

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“…A mobility value as high as 200 cm 2 (Vs) −1 has been reported in literature [14]. The density of states (DoS) of ZnON material, which governs the carrier transport through the semiconductor, has been studied both experimentally and theoretically, to investigate the reasons for the superior mobility offered by ZnON [15][16][17][18]. It has been reported that the low effective mass of electrons in ZnON thin films is the reason for the increased mobility [8].…”

Section: Introductionmentioning

confidence: 99%

Surface potential based modeling of zinc oxynitride thin film transistors

Anjana¹,

Anand²,

Nair³

2022

Flex. Print. Electron.

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In this work we present analytical models for the drain current and threshold voltage of Zinc oxynitride thin film transistors. A surface potential based modeling approach has been adopted and the exact closed form solutions for the potential profile, drain current and threshold voltage have been obtained. In order to account for the effects of both free and localized charges in the semiconductor, an effective charge density method has been used. The models were validated against experimental data from literature. The models show good agreement with the data.

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