Two-dimensional optoelectronic devices for silicon photonic integration

Tang, Zilan; Chen, Shula; Li, Dong; Wang, Xiaoxia; Pan, Anlian

doi:10.1016/j.jmat.2022.11.007

Cited by 13 publications

(5 citation statements)

References 196 publications

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“…The red asterisk denotes the extrinsic contribution to the relative dielectric response. [ 9–11,44–53 ]…”

Section: Resultsmentioning

confidence: 99%

“…The red asterisk denotes the extrinsic contribution to the relative dielectric response. [9][10][11][44][45][46][47][48][49][50][51][52][53] upon the bias is ≥ 48 kV cm −1 . The variation in the volume fractions of the domains is determined by the alteration in the peak intensity ratio.…”

Section: Domain Switching Dynamicsmentioning

confidence: 99%

“…PPT and MPB represent the polymorphic phase transition and morphotropic phase boundary, respectively. The red asterisk denotes the extrinsic contribution to the relative dielectric response [9][10][11][44][45][46][47][48][49][50][51][52][53].…”

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confidence: 99%

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Extraordinarily Large Contribution Ratio of Ferroelastic Domain Switching to Piezoresponse in Monoclinic (K, Na)NbO₃ Films

Yuan,

Okamoto,

Kawano

et al. 2023

Adv Elect Materials

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Ferroelectric monoclinic phases have attracted exceptional attention as the origin of giant piezoelectricity, whilst the detailed contributions of ferroelastic domain switching and electric‐field induced lattice strain to the piezoelectric response remain still challenging to clarify. In this work, these contributions to the piezoelectric response are deconvoluted in a (K0.4Na0.6)NbO3 (KNN) film epitaxially grown in monoclinic phase on Nb‐doped SrTiO3, where the as‐deposited film feature (111) and () non‐180° domains. By time‐resolved synchrotron X‐ray diffraction, the ferroelastic domain switching and electric‐field induced lattice strain subjected to an ultrafast electric‐field pulse are quantitatively probed. The switching of ≈4% volume fraction of (111) domains into () ones by a moderate electric field and its response within 30 µs as well are unambiguously unveiled. Interestingly, the contribution of domain switching to the strain is larger than the total strain of the film, which is enabled because of the negative electric‐field‐induced lattice strain. The present study connects macroscopic piezoelectric response in KNN films with the underlying microscopic origins unveiled by separating two contributions, which may provide a knowledge platform that allows for significant achievement of practical lead‐free piezoelectric microelectromechanical and nanoelectromechanical systems in the future.

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“…The red asterisk denotes the extrinsic contribution to the relative dielectric response. [ 9–11,44–53 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Domain Switching Dynamicsmentioning

confidence: 99%

See 1 more Smart Citation

Extraordinarily Large Contribution Ratio of Ferroelastic Domain Switching to Piezoresponse in Monoclinic (K, Na)NbO₃ Films

Yuan,

Okamoto,

Kawano

et al. 2023

Adv Elect Materials

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“…Two-dimensional materials (2D) benefiting from unique physical and chemical properties have garnered considerable attention and are potentially applied in various fields, including catalysis, , piezoelectricity, , and optoelectronics. − Among them, 2D materials with extremely high or low lattice thermal conductivity (κ l ) play a vital role in engineering thermal management and thermoelectric applications. − Notably, materials like graphene (∼5000 W/mK), , h-BN (751 W/mK), , PdSe 2 (3 W/mK), , and GeAs 2 (0.68 W/mK), , all of which have been successfully synthesized, demonstrated significant potential in engineering thermal management and thermoelectricity. However, challenges persistgraphene lacks a bandgap, PdSe 2 has a thermal-to-electric conversion efficiency of less than 5%, and challenges in exfoliating GaAs 2 due to the quasi-covalent bonds between layerswhich limit their practical applications.…”

Section: Introductionmentioning

confidence: 99%

Thermal Transport Properties of Two-Dimensional Janus MoXSiN₂ (X = S, Se, and Te)

Gan,

Wei,

et al. 2024

Langmuir

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The design of Janus materials offers an effective means of regulating both their physical and chemical properties, leading to their application in various fields. However, the underlying mechanism governing the modulation of the thermal transport characteristics through the construction of Janus materials remains unclear. In this work, we introduce VI-group elements into the MoSi 2 N 4 structure, yielding two-dimensional Janus MoXSiN 2 (X = S, Se, and Te) and systematically investigate their thermal transport properties based on first-principles calculation methods. Our findings reveal that the lattice thermal conductivities (κ l ) of MoSSiN 2 , MoSeSiN 2 , and MoTeSiN 2 are 47.2, 24.3, and 40.6 W/mK at 300 K, respectively, significantly lower than that of MoSi 2 N 4 (224 W/mK). Such low κ l values mainly come from the introduction of X atoms, which enhances phonon scattering and reduces phonon vibration frequencies. In addition, MoTeSiN 2 exhibits a higher κ l compared to MoSeSiN 2 , contrary to the trend observed in most materials containing VI-group elements, where κ l decreases gradually from S to Te. This anomalous behavior can be attributed to the competitive result between its lower phonon vibrational frequency and weaker phonon anharmonicity of MoTeSiN 2 . This work elucidates the inherent mechanism governing the modulation of thermal transport properties in Janus materials, thereby enhancing the potential application of Janus MoXSiN 2 in engineering thermal management.

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“…Nowadays, there are many kinds of SPP hybrid waveguides, and their performance has been greatly improved [28][29][30][31][32][33][34][35]. But with the rapid development of optoelectronic integrated systems, the requirement for waveguides is increasing [36][37][38]. New breakthroughs must be found to achieve good performance on small-sized devices.…”

Section: Introductionmentioning

confidence: 99%

Dual Coupled Long-Range Hybrid Surface Plasmon Polariton Waveguide for Sub-Wavelength Confinement

Wang,

Zhao

et al. 2023

Micromachines

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In this paper, a long-range hybrid waveguide for subwavelength confinement based on double SPP coupling is proposed. The hybrid waveguide consists of a metal-based cylindrical hybrid waveguide and a silver nanowire. There are two coupling regions in the waveguide structure that enhance mode coupling. Strong mode coupling enables the waveguide to exhibit both a small effective mode area (0.01) and an extremely long transmission length (700 μm). The figure of merit (FOM) of the waveguide can be as high as 4000. In addition, the cross-sectional area of the waveguide is only 500 nm × 500 nm, allowing optical operation in the subwavelength range, which helps enhance the miniaturization of optoelectronic devices. The excellent characteristics of the hybrid waveguide make it have potential applications in photoelectric integrated systems.

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Two-dimensional optoelectronic devices for silicon photonic integration

Cited by 13 publications

References 196 publications

Extraordinarily Large Contribution Ratio of Ferroelastic Domain Switching to Piezoresponse in Monoclinic (K, Na)NbO₃ Films

Extraordinarily Large Contribution Ratio of Ferroelastic Domain Switching to Piezoresponse in Monoclinic (K, Na)NbO₃ Films

Thermal Transport Properties of Two-Dimensional Janus MoXSiN₂ (X = S, Se, and Te)

Dual Coupled Long-Range Hybrid Surface Plasmon Polariton Waveguide for Sub-Wavelength Confinement

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Two-dimensional optoelectronic devices for silicon photonic integration

Cited by 13 publications

References 196 publications

Extraordinarily Large Contribution Ratio of Ferroelastic Domain Switching to Piezoresponse in Monoclinic (K, Na)NbO3 Films

Extraordinarily Large Contribution Ratio of Ferroelastic Domain Switching to Piezoresponse in Monoclinic (K, Na)NbO3 Films

Thermal Transport Properties of Two-Dimensional Janus MoXSiN2 (X = S, Se, and Te)

Dual Coupled Long-Range Hybrid Surface Plasmon Polariton Waveguide for Sub-Wavelength Confinement

Contact Info

Product

Resources

About

Extraordinarily Large Contribution Ratio of Ferroelastic Domain Switching to Piezoresponse in Monoclinic (K, Na)NbO₃ Films

Extraordinarily Large Contribution Ratio of Ferroelastic Domain Switching to Piezoresponse in Monoclinic (K, Na)NbO₃ Films

Thermal Transport Properties of Two-Dimensional Janus MoXSiN₂ (X = S, Se, and Te)