Using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), scanning tunnelling microscopy (STM) and high resolution photo-electron spectroscopy (HR-PES) techniques we have studied the annealing effect of one silicon monolayer deposited at room temperature onto a Ni (111) substrate.The variations of the Si surface concentration, recorded by AES at 300°C and 400°C, show at the beginning a rapid Si decreasing followed by a slowing down up to a plateau equivalent to about 1/3 silicon monolayer.STM images and LEED patterns, both recorded at room temperature just after annealing, reveal the formation of an ordered hexagonal superstructure ( 3 3) 30 R ×°-type. From these observations and from a quantitative analysis of HR-PES data, recorded before and after annealing, we propose that the ( 3 3) 30 R ×°superstructure corresponds to a two dimensional (2D) Ni 2 Si surface silicide.