Two‐Dimensional Semiconductors: From Device Processing to Circuit Integration

Abstract

The atomically thin nature and exceptional electrical properties of 2D materials (2DMs) have garnered significant interest in circuit applications. Researchers have developed circuits based on wafer‐level 2DM fabrication and monolithic integration in the laboratory. Numerous studies have been conducted on discrete device processes; however, circuit manufacturing is a multifaceted and methodical engineering process that demands seamless integration of multiple procedures. Notably, the optimization of crucial processes holds paramount significance in achieving expected results. This review presents the existing research on process integration of 2DM devices and circuit applications. The selection of suitable 2DMs for circuit applications is outlined, considering their excellent theoretical properties and feasible high‐quality growth processes. Drawing on highly mature semiconductor manufacturing process, while incorporating customized key processes, 2DM devices have the potential to strongly compete with, and even outperform, the conventional devices. Finally, the recent circuit applications of 2DMs are also discussed in detail. 2DM integrated circuits (2DM ICs) are now being practically applied in advanced manufacturing, transitioning from laboratory development to fabrication plant deployment. The implementation of underlying 2DM IC fabrication provides effective and unique solutions for More Moore, More than Moore, and Beyond CMOS technology routes.

Machine learning assisted layer-controlled synthesis of MoS2

“…Two-dimensional transition metal dichalcogenides (TMDs), such as MoS 2 , MoSe 2 , WSe 2 and WS 2 , have received much attention recently since they exhibit intriguing chemical and electronic properties. 1–5 MoS 2 , one of the most extensively studied and popular members of TMDs, exhibits unique characteristics such as tunable bandgap, high on/off ratio, strong photoluminescence (PL), and excellent environmental stability, making it a promising material in the next generation of nanoelectronics. 6–10 The variation in its layers profoundly impacts its physical and chemical properties.…”

Inkjet-Printed, High-Performance MoS2 Transistors and Unipolar Logic Electronics

“…When lithographically patterned intraflake devices on mechanically exfoliated MoS 2 are concerned, combining those high-performance thin film transistors, numerous circuit elements have also been reported in the literature. ,− Notably, even 1 bit microprocessors have been demonstrated as early as 2017 . Nonetheless, the roadblock in upscaling such circuit elements has hindered their widespread realization for unconventional or flexible electronic applications.…”

Two-dimensional semiconductors based field-effect transistors: review of major milestones and challenges

“…These include wafer-scale production of single-crystalline 2-D semiconductors and fabrication of logic devices at large scale, high-quality and ultralow-resistance metal contact to 2-D semiconducting channels, high-quality integration of 2-D channels with high-k oxides, demonstration of state-of-the-art devices on a wafer scale, breaking Boltzmann's tyranny using the exotic and versatile E − k dispersion of 2-D materials, alleviation of the lithography limitations on gate patterning, and facilitation of ultrashort gate dimensions using CNTs, graphene, and metallic nanowires, to name a few. Several reports have been presented, discussing: i) the critical performance metrics for aggressively scaled 2-D transistors, offering their extraction and reporting guidelines (Das et al, 2021), materials preparation (Liu et al, 2017), electrical characterization Mitta et al (2020), and ii) the promising potential of 2-D FETs in very large scale integration (VLSI) design (Fiori et al, 2014;Dorow et al, 2022;Knobloch et al, 2023;Naylor et al, 2023;Sheng et al, 2023). Here, we discuss the family of 2-D materials from the perspective of device design, recent developments to improve the performance of 2-D logic devices, and the unique features facilitated by 2-D semiconductors.…”