Two-dimensional semiconductors: recent progress and future perspectives

Abstract

Graphene with a sp 2 -honeycomb carbon lattice has drawn a large amount of attention due to its excellent properties and potential applications in many fields. Similar to the structure of graphene, two-dimensional semiconductors are its two-dimensional and isostructural counterparts based on the typical layerstructured semiconductors, such as boron nitride (h-BN) and transition metal dichalcogenides (e.g. MoS 2 and WS 2 ), whose layers are bound by weak van der Waals forces. Unlike the semi-metal features of graphene, the two-dimensional semiconductors are natural semiconductors with thicknesses on the atomic scale. When one of the dimensions is extremely reduced, the two-dimensional semiconductors exhibit some unique properties, such as a transition from indirect to direct semiconductor properties, and hence have great potential for applications in electronics, energy storage, sensors, catalysis and composites, which arise both from the dimension-reduced effect and from the modified electronic structure. In this feature article, recent developments in the synthesis, properties and applications of two-dimensional semiconductors are discussed. The reported virtues and novelties of two-dimensional semiconductors are highlighted and the current problems in their developing process are clarified, in addition to their challenges and future prospects.

Layer- and strain-dependent optoelectronic properties of hexagonal AlN

“…On the other hand, no cathodoluminescence or photoluminescence measurements of monolayer or few-layer h-BN structures have yet been reported. This indicates that further studies are needed in order to explore the optical properties of h-BN to expand its potential applications [15].…”

Boron Nitride Nanosheets for Metal Protection

“…BN nanosheets have comparable impermeability, mechanical properties and thermal conductivity to graphene. [11][12][13][14][15][16][17] In addition, BN nanosheets are more transparent to visible light due to their wide bandgap and have greater chemical and thermal stability. [18] Most importantly, BN nanosheets are electrically insulating [19] and do not enhance galvanic corrosion of the underlying metal.…”

Structural and Electrical Investigation of MoS2Thin Films Formed by Thermal Assisted Conversion of Mo Metal

“…4,5,6,7 Furthermore, as a result of both the reduced dimension and modified electronic structure these materials have great potential for applications in electronics, energy storage and conversion, 8 as well as sensors. 9 TMD materials are comprised of single-atomic layers of transition metal atoms (e.g.…”