Two dimensional simulation and modeling of the electrical characteristics of the a-SiC/c-Si(p) based, thyristor-like, switches

Dimitriadis, E.I.; Archontas, Nikolaos; Girginoudi, D.; Georgoulas, N.

doi:10.1016/j.mee.2014.11.006

Cited by 6 publications

(2 citation statements)

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“…The DoS parameters used in the simulations at T = 300 K are summarized in Table 3 [44][45][46]. According to experimental data from the literature, we can put in evidence that the bandedge trap densities of states are over two orders of magnitude higher than the energyconstant midgap contribution [42,43].…”

Section: H-sic/sio 2 Interface Trapsmentioning

confidence: 99%

“…In more detail, Z 1/2 centers are located in the upper half of the 4H-SiC bandgap whereas the EH 6/7 level is close to the midgap (~1.65 eV). Although the EH 6/7 nature as recombination centers can be uncertain, in the n-type 4H-SiC Z 1/2 and EH 6/7 are usually recognized as the acceptor-level and the donor-level of a carbon vacancy, respectively [45,[47][48][49].…”

Section: H-sic Intrinsic Defectsmentioning

confidence: 99%

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Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

et al. 2021

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A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

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