Two-dimensional simulation of GaAsSb/GaAs quantum dot solar cells

Abstract

Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar cell are investigated. The solar cell is designed as a p-i-n GaAs structure where a single layer of GaAsSb QDs is introduced into the intrinsic region. The current density–voltage characteristics of QD solar cells are derived from Poisson’s equation, continuity equations, and the drift-diffusion transport equations, which are numerically solved by a finite element method. Furthermore, the transition energy of a single GaAsSb QD and its corresponding wavelength for each As mole fraction are calculated by a six-band k · p model to validate the position of the absorption edge in the external quantum efficiency curve. A GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4 provides the best power conversion efficiency. The overlap between electron and hole wave functions becomes larger as the As mole fraction increases, leading to a higher optical absorption probability which is confirmed by the enhanced photogeneration rates within and around the QDs. However, further increasing the As mole fraction results in a reduction in the efficiency because the absorption edge moves towards shorter wavelengths, lowering the short-circuit current density. The influences of the QD size and density on the efficiency are also examined. For the GaAsSb/GaAs QD solar cell with an As mole fraction of 0.4, the efficiency can be improved to 26.2% by utilizing the optimum QD size and density. A decrease in the efficiency is observed at high QD densities, which is attributed to the increased carrier recombination and strain-modified band structures affecting the absorption edges.

Theoretical Approach to Study the Physical Properties of GaAsSb Alloy

“…Commercial development of highly electronegativity-mismatched (HEM) semiconductors in the 0.9 μm to 1.7 μm range on GaAs or InP substrate to fulfill the needs of short-wavelength applications, such as GaAsSb QWs embedded in GaAs emit photons with wavelengths nearby 1.3 μm [1,2,3], quantum dot solar cells [4], unravelling carrier photodiodes [5], vertical-cavity surface-emitting lasers [6], respectively. Although several studies have been published on GaAs 1−x Sb x semiconductor alloy, no known information on fundamental thermal properties can be found in detail.…”