Two-dimensional simulations of drain-current transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels

Horio, K.; Fuseya, Yasuhiro

doi:10.1109/16.297727

Cited by 42 publications

(21 citation statements)

References 26 publications

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“…Fig.2 shows calculated drain-current responses of normal AlGaN/GaN HEMTs when V D is raised abruptly from 0 V to 20 V (upper) or when it is lowered abruptly from 20 V to 10 V (lower), where the gate voltage (V G ) is kept constant at 0 V. Here N DD is 5x10 16 cm -3 and N DA is 2x10 16 cm -3 , and three cases with different E C -E DD are shown. In the cases when V D is raised, initially an extremely large transient overshoot is observed (Horio and Fuseya, 1994). This is because the drain voltage is initially applied along the gate-to-drain bulk region.…”

Section: Drain Lagmentioning

confidence: 99%

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Analysis of Parasitic Effects in AIGaN/GaN HEMTs

Horio¹

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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This book is planned to publish with an objective to provide a state-of-the-art reference book in the areas of advanced microwave, MM-Wave and THz devices, antennas and systemtechnologies for microwave communication engineers, Scientists and post-graduate students of electrical and electronics engineering, applied physicists. This reference book is a collection of 30 Chapters characterized in 3 parts: Advanced Microwave and MM-wave devices, integrated microwave and MM-wave circuits and Antennas and advanced microwave computer techniques, focusing on simulation, theories and applications. This book provides a comprehensive overview of the components and devices used in microwave and MM-Wave circuits, including microwave transmission lines, resonators, filters, ferrite devices, solid state devices, transistor oscillators and amplifiers, directional couplers, microstripeline components, microwave detectors, mixers, converters and harmonic generators, and microwave solid-state switches, phase shifters and attenuators. Several applications area also discusses here, like consumer, industrial, biomedical, and chemical applications of microwave technology. It also covers microwave instrumentation and measurement, thermodynamics, and applications in navigation and radio communication. How to referenceIn order to correctly reference this scholarly work, feel free to copy and paste the following: 978-953-307-031-5, InTech, Available from: http://www.intechopen.com/books/advanced-microwave-andmillimeter-wave-technologies-semiconductor-devices-circuits-and-systems/analysis-of-parasitic-effects-inaigan-gan-hemts

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Section: Drain Lagmentioning

confidence: 99%

“…On the other hand, when V D is lowered, initially a large transient undershoot is observed. This is also due to the abrupt change of drain voltage, as described above (Horio and Fuseya, 1994). Then, the drain currents remain at low values for some periods ("quasi-steady state") and begin to increase slowly, showing drain-lag behavior.…”

Section: Drain Lagmentioning

confidence: 99%

Analysis of Parasitic Effects in AIGaN/GaN HEMTs

Horio¹

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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“…Here E C -E DD is 1.0 eV. When V Dfin is 6 to 10 V, the drain currents become constant temporarily around t = 10 -10 s ("quasi-steady state" [5]), and begin to decrease gradually after some time, reaching real steady-state values. For V Dfin = 20 V, the quasi-steady state is not observed, and for V Dfin = 2 V, no slow transients are observed.…”

Section: Introductionmentioning

confidence: 99%

Buffer‐trapping effects on drain lag and power compression in GaN FET

Horio

Yonemoto

2005

phys. stat. sol. (c)

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PACS 71.55.Eq, 72.20.Jv, 85.30.De, 85.30.Tv Buffer-trapping effects in a GaN MESFET are studied by two-dimensional transient simulation. A threelevel compensation model is adopted for a semi-insulating buffer layer where a shallow donor, a deep donor and a deep acceptor are considered. It is shown that when the drain voltage V D is raised, the drain current overshoots the steady-state value, and when V D is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called power compression in the GaN MESFET.

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“…This is called power (current) compression [2,3]. These are serious problems, and there are many experimental works reported on these phenomena, but only a few theoretical works are reported for HFETs [4,5], although several numerical analyses were made for MESFETs [6][7][8][9][10]. Also, the lag phenomena were studied by changing only V D or V G .…”

Section: Introductionmentioning

confidence: 99%

“…Figure 1 shows a modeled AlGaAs/GaAs HFET. As a substrate, we consider undoped semi-insulating GaAs where deep donors "EL2" (N EL2 ) compensate shallow acceptors (N Ai ) [6]. As a surface state, we consider an acceptor-type state, and vary its energy level E SA as a parameter, because the detailed information is not obtained for AlGaAs surface.…”

Section: Introductionmentioning

confidence: 99%

Simulation of slow current transients and current compression in AlGaAs/GaAs HFETs

et al. 2006

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Two-dimensional transient simulations of AlGaAs/GaAs HFETs are performed in which substrate traps and surface states are considered. When the drain voltage is raised abruptly, the drain current overshoots the steady-state value, and when it is lowered abruptly, the drain current remains at a low value, showing drain-lag behavior. Turn-on characteristics are also calculated when both the gate voltage and the drain voltage are changed abruptly, and quasi-pulsed I -V curves are derived from them. It is shown that the drain lag due to substrate traps could become a cause of so-called current compression of the HFETs. It is also shown that gate lag due to surface states could become a major cause of the current compression.

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Two-dimensional simulations of drain-current transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels

Cited by 42 publications

References 26 publications

Analysis of Parasitic Effects in AIGaN/GaN HEMTs

Analysis of Parasitic Effects in AIGaN/GaN HEMTs

Buffer‐trapping effects on drain lag and power compression in GaN FET

Simulation of slow current transients and current compression in AlGaAs/GaAs HFETs

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