2015
DOI: 10.1364/ol.40.000589
|View full text |Cite
|
Sign up to set email alerts
|

Two-dimensional snowflake trap for indirect excitons

Abstract: We present experimental proof of principle for two-dimensional electrostatic traps for indirect excitons. A confining trap potential for indirect excitons is created by a snowflake-shaped electrode pattern. We demonstrate collection of indirect excitons from all directions to the trap center and control of the trap potential by voltage.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
10
0

Year Published

2016
2016
2023
2023

Publication Types

Select...
6
1
1

Relationship

1
7

Authors

Journals

citations
Cited by 14 publications
(10 citation statements)
references
References 27 publications
0
10
0
Order By: Relevance
“…One possibility seems to position the CQW close to the back-contact and to utilize a resonant excitation. Another possibility to overcome the problem of excess charge carriers at the trap-edges seems to be the use of many gates [32] where the interplay of all gates form the overall electrostatic traps in the direction of [78]. For two respective neighboring gates, the gate voltage needs to be small enough such that the IXs are not dissociated.…”
Section: Discussionmentioning
confidence: 99%
“…One possibility seems to position the CQW close to the back-contact and to utilize a resonant excitation. Another possibility to overcome the problem of excess charge carriers at the trap-edges seems to be the use of many gates [32] where the interplay of all gates form the overall electrostatic traps in the direction of [78]. For two respective neighboring gates, the gate voltage needs to be small enough such that the IXs are not dissociated.…”
Section: Discussionmentioning
confidence: 99%
“…To explore the collective phases accessible to dipolar excitons, GaAs double quantum wells provide an experimental toy model system, since excitons are then possibly manipulated in a regime of homogeneous broadening [11], and spatially confined in on-demand potential landscapes [12][13][14][15][16][17]. Using these degrees of freedom, we have recently mapped out the quasicondensation crossover of bilayer excitons in boxlike trapping potentials [11,18,19], determining the excitons' equation of state and density fluctuations, and correlated these to the degree of spatial and temporal coherence at subkelvin temperatures.…”
mentioning
confidence: 99%
“…This implies that dipolar excitons have a potential energy controlled by the amplitude of the electric field applied orthogonally to the bilayer. By engineering a spatially inhomogeneous electric field in the plane of a GaAs double quantum well, typically using a set of gate electrodes deposited at the surface of a fieldeffect device embedding a GaAs bilayer, a rich variety of trapping potentials have been demonstrated [11][12][13][14], as well as devices where excitonic transport is controlled [15][16][17][18].…”
mentioning
confidence: 99%