2003
DOI: 10.1111/j.1151-2916.2003.tb03292.x
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Two‐Layer Crystallization of Amorphous YMnO3 Thin Films on Si (100) Substrates

Abstract: During a rapid thermal annealing process at 850°C in a N2 ambient, an as‐deposited amorphous YMnO3 thin film on Si (100) substrates was crystallized with two distinct layers. High‐resolution transmission electron microscopy showed a top layer of c‐axis‐oriented YMnO3 and a bottom layer of polycrystalline YMnO3 in the 100‐nm‐thick YMnO3 thin film. The abrupt change of the crystalline orientation from the c‐axis‐preferred orientation to the random orientation is caused primarily by high stress induced by the c‐a… Show more

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Cited by 4 publications
(3 citation statements)
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“…Figure b shows a gradual increase in peak intensity with increasing MAPbBr 3 precursor concentration, which reflects the fact that thicker films lead to stronger XRD intensity . Compared with the peaks of single-layer MAPbBr 3 , either (111) or (222) diffraction peaks were not observed in the composite structure samples, which could be due to the A -axis selective orientation growth of MAPbBr 3 films caused by ITO buffer layer stress …”
Section: Results and Discussionmentioning
confidence: 99%
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“…Figure b shows a gradual increase in peak intensity with increasing MAPbBr 3 precursor concentration, which reflects the fact that thicker films lead to stronger XRD intensity . Compared with the peaks of single-layer MAPbBr 3 , either (111) or (222) diffraction peaks were not observed in the composite structure samples, which could be due to the A -axis selective orientation growth of MAPbBr 3 films caused by ITO buffer layer stress …”
Section: Results and Discussionmentioning
confidence: 99%
“…26 Compared with the peaks of single-layer MAPbBr 3 , either (111) or (222) diffraction peaks were not observed in the composite structure samples, which could be due to the A-axis selective orientation growth of MAPbBr 3 films caused by ITO buffer layer stress. 27 Figure 2c shows the crystal structure of MAPbBr 3 , where methyl ammonium (CH 3 NH 3 + , MA) is surrounded by PbBr 6 To examine the extent to which ITO affects the A-axis meritocratic orientation of perovskite, the texture coefficient (TC) was used to analyze it. 28 (1) with I(hkl) i being the observed intensity of the (hkl) i plane and I 0 (hkl) i the intensity of the (hkl) i lattice plane of the polycrystalline perovskite sample, while N describes the total number of reflections considered.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore the substrate seems to promote the [100] growth; beyond a critical thickness, this orientation is overwhelmed by relaxation mechanisms that come along with the novel [110] preferred orientation. Evidences of changes from random to c -axis orientation have been reported by Yoo et al in the case of YMnO 3 /Si(100) thin films as a results of quenching procedure. Thus, in addition to the film/substrate lattice mismatch, the strains produced during the cooling process can induce the differential layering.…”
mentioning
confidence: 67%