Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 µm

Danilova, A. P.; Imenkov, A. N.; Kolchanova, N. M.; Sherstnev, V. V.; Yakovlev, Yu. P.; Civiš, Svatopluk

doi:10.1134/1.1187918

Cited by 8 publications

(9 citation statements)

References 4 publications

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“…The main structure parameters were described in our earlier articles. 16,17 The double channel mesa-strip laser chips with different strip width and 500 m step were processed by photolithography.…”

Section: Methodsmentioning

confidence: 99%

“…An increasing number of attempts have been made to develop ''single-mode'' lasers, i.e., lasers that under given conditions of temperature and current emit radiation with single wavelength. 16,17 The laser always generates several modes, since the intervals between the normal cavity frequencies are substantially smaller than the width of the gain spectrum for the active medium. Less noise is expected from competing modes in lasers based on InAsSb/ InAsSbP with controlled injection density along the cavity width, 18 because smooth waveguide is formed in the cavity.…”

Section: Introductionmentioning

confidence: 99%

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The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2–3.6 μm (2800–3100 cm−1)

Imenkov

Kolchanova

Yakovlev

et al. 2001

Review of Scientific Instruments

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A method was used to measure the width of emission lines of a type of semiconductor laser with composition InAsSb/InAsSbP. This type of laser was manufactured specially for absorption high-resolution spectroscopy of gases absorbing in the 2800–3100 cm−1 region. Parameters used for calculation of spectral emission linewidths were obtained using selected rotation-vibration lines of the gaseous molecules N2O, CH3Cl, and OCS. The estimated spectral emission linewidths varied in the range 10–30 MHz in dependence of the current passing and the type of laser.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2–3.6 μm (2800–3100 cm−1)

Imenkov

Kolchanova

Yakovlev

et al. 2001

Review of Scientific Instruments

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“…The quality of the laser is deter− mined by its spectral characteristics. An increasing number of attempts have been made to develop "single−mode" lasers, i.e., lasers that under given conditions of temperature and current emit radiation with single wavelength [19,20]. The laser always generates several modes, since the inter− vals between the normal cavity frequencies are substantially smaller than the width of the gain spectrum for the active medium.…”

Section: Introductionmentioning

confidence: 99%

Infrared diode laser spectroscopy

Civiš

Cihelka²,

Matulková

2010

Opto-Electronics Review

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Three types of lasers (double-heterostructure 66 K InAsSb/InAsSbP laser diode, room temperature, multi quantum wells with distributed feedback (MQW with DFB) (GaInAsSb/AlGaAsSb based) diode laser and vertical cavity surface emitting lasers (VCSELs) (GaSb based) have been characterized using Fourier transform emission spectroscopy and compared. The photoacoustic technique was employed to determine the detection limit of formaldehyde (less than 1 ppmV) for the strongest absorption line of the v3 + v5 band in the emission region of the GaInAsSb/AlGaAsSb diode laser. The detection limit (less than 10 ppbV) of formaldehyde was achieved in the 2820 cm−1 spectral range in case of InAsSb/InAsSbP laser (fundamental bands of v1, v5). Laser sensitive detection (laser absorption together with high resolution Fourier transform infrared technique including direct laser linewidth measurement, infrared photoacoustic detection of neutral molecules (methane, form-aldehyde) is discussed.Additionally, very sensitive laser absorption techniques of such velocity modulation are discussed for case of laser application in laboratory research of molecular ions. Such sensitive techniques (originally developed for lasers) contributed very much in identifying laboratory microwave spectra of a series of anions (C6H−, C4H−, C2H−, CN−) and their discovery in the interstellar space (C6H−, C4H−).

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“…The core of the InAsSb/InAsSbP laser [7,8] was prepared by liquid phase epitaxy on p-InAs (1 0 0) substrate at the IOFFE Physico-Technical Institute in St. Petersburg. The structure consists of four layers: p-InAsSbP cladding, n-InAsSb active, n-InAsSbP cladding and a n-InAs cap layer.…”

Section: Inassb/inassbp Lasermentioning

confidence: 99%

“…This work was intended to study the potential application of photoacoustic detection (PA) in the monitoring of formaldehyde in the region around 2.3 lm and 3.6 lm using multiple quantum well (MQW) GaInAsSb/AlGaAsSb diode lasers [4][5][6] and a multimode semiconductor laser diode based on InAsSb/InAsSbP heterostructure, respectively [7,8]. MQW GaInAsSb/AlGaAsSb based laser diodes (LDs) operate at room temperature in the mid infrared region.…”

Section: Introductionmentioning

confidence: 99%