Two modes of HVPE growth of GaN and related macrodefects

Voronenkov, V. V.; Bochkareva, N. I.; Gorbunov, R. I.; Latyshev, Philippe; Lelikov, Yu. S.; Rebane, Yu. T.; Tsyuk, A. I.; Zubrilov, A. S.; Popp, U.; Strafela, M.; Strunk, H. P.; Shreter, Yu. G.

doi:10.1002/pssc.201200701

Cited by 20 publications

(16 citation statements)

References 14 publications

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“…Taking into account the results of morphology investigation presented in this work and the literature, 13,15,37,38 a model for the growth of bulk HVPE-grown GaN is proposed: The growth process of bulk GaN using HVPE techniques is governed by the formation and subsequent overgrowth of the so-called V-type defects or pits on the film surface. The origin of pit formation could be any type of imperfection able to locally reduce the growth rate such as threading dislocations, cracks, substrate contamination, foreign particles landing on the growing film, etc.…”

Section: Ecs Journal Of Solid State Science and Technology 5 (5) P21mentioning

confidence: 99%

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Tiginyanu

Stevens‐Kalceff

Sarua

et al. 2016

ECS J. Solid State Sci. Technol.

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Self-organized 3D nanostructured architectures including quasi-ordered concentric hexagonal structures generated during the growth of single crystalline n-GaN substrates by hydride vapor phase epitaxy (HVPE) are reported. The study of as-grown samples by using Kelvin Probe Force Microscopy shows that the formation of self-organized architectures can be attributed to fine modulation of doping related to the spatial distribution of impurities. The specific features of nanostructured architectures involved have been brought to light by using electrochemical and photoelectrochemical etching techniques which are highly sensitive to local doping. The analysis of the results shows that the formation of self-organized spatial architectures in the process of HVPE is caused by the generation of V-pits and their subsequent overgrowth accompanied by the growth in variable direction. It is demonstrated for the first time that the electrical and luminescence properties of HVPE-grown GaN are spatially modulated throughout, including islands between overgrown V-pit regions. The dependence of doping upon growth direction is confirmed by the micro-cathodoluminescence characterization of HVPE-grown pencil-like microcrystals exposing various crystallographic planes along the tip. These results are indicative of new possibilities for defect engineering in gallium nitride and for three-dimensional spatial nanostructuring of this important electronic material by controlling the growth direction. Gallium Nitride (GaN), a wide-bandgap semiconductor compound (E g = 3.4 eV at 300 K), is considered nowadays the second most important semiconductor material after Si. Over the past decades it has played a major role in the development of modern solid-state lighting industry.1-3 An intensive investigation of this compound started in 1970's, but with minimal success in the development of real applications. In the absence of native bulk material, GaN epilayers were grown on foreign substrates and, as a result of the large lattice mismatch and difference in thermal expansion coefficients, the overgrown films contained a high concentration of threading dislocations. The fascinating point, however, is that even in the presence of very high concentrations of dislocations, sometimes exceeding 10 10 cm −2 , gallium nitride exhibits intense luminescence, a property that makes the compound unique in comparison with other III-V materials, such as GaAs, GaP and InP. This particular feature along with other material characteristics were of paramount importance for the development and subsequent commercialization of GaN-based blue light emitting diodes by the mid-1990s. 4 This significant optoelectronic success resulted in the Nobel Prize for Physics being awarded to Shuji Nakamura, Isamu Akasaki and Hiroshi Amano, in 2014. There is no doubt that lighting technologies based on GaN and related nitrides will continue their impactful evolution, particularly in view of the recent demonstration of electrically pumped inversionless polariton lasing at room temper...

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Section: Ecs Journal Of Solid State Science and Technology 5 (5) P21mentioning

confidence: 99%

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Tiginyanu

Stevens‐Kalceff

Sarua

et al. 2016

ECS J. Solid State Sci. Technol.

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“…A set of more than 100 GaN films with a thickness from 100 µm to 5000 µm were grown on c-plane sapphire substrates with a thickness of 430 µm and a diameter of 52 µm (2 inch was used to grow crack-free films with smooth surface [17]. No special substrate surface treatment to weaken the bonding between the substrate and the GaN film was employed.…”

Section: A Self-separation Of Gan Films On Sapphire Substratesmentioning

confidence: 99%

Thick GaN Film Stress-induced Self-separation

Voronenkov¹,

Leonidov²,

Lelikov³

et al. 2019

2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)

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“…В результате были получены кристаллы нитрида галлия диаметром 52 mm с толщиной от 0.6 до 5 mm. Поверхность образцов является зеркально гладкой, на поверхности присутствуют ростовые дефекты -ямки, имеющие форму инверсных гексагональных пирамид, происхождение которых обсуждается в работе [2].…”

Section: технология изготовления объемных кристаллов нитрида галлияunclassified

Оптические Свойства Объемных Монокристаллов Нитрида Галлия, Выращенных Методом Хлорид-Гидридной Газофазной Эпитаксии

Агекян¹,

Борисов²,

Serov³

et al. 2017

Физика Твердого Тела

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Кристалл нитрида галлия толщиной 5 mm был выращен методом хлорид-гидридной газофазной эпитаксии на сапфировой подложке, от которой кристалл отделился в процессе остывания. На ранней стадии был реализован трехмерный режим роста с последующей сменой на двумерный режим. В нескольких характерных областях образца исследованы спектры экситонного отражения, экситонной люминесценции и рамановского рассеяния. Анализ этих спектров и сравнение с ранее полученными данными для тонких эпитаксиальных слоев GaN с широким диапазоном легирования кремнием позволили сделать выводы о качестве кристаллической решетки в этих характерных областях образца.Работа выполнена в рамках инициативной темы СПбГУ № 11.52.454.2016, для исследования спектров рамановского рассеяния использовалось оборудование Ресурсного центра СПбГУ " Оптические и лазерные методы исследования вещества".

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Two modes of HVPE growth of GaN and related macrodefects

Cited by 20 publications

References 14 publications

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Thick GaN Film Stress-induced Self-separation

Оптические Свойства Объемных Монокристаллов Нитрида Галлия, Выращенных Методом Хлорид-Гидридной Газофазной Эпитаксии

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