Two new BN polymorphs with wide-bandgap

BN Polymorphs in Hexagonal 2–7 Stacking Orders: First-Principles and High-Throughput Study

“…As long as the shape of the threedimensional view of Young's modulus of a material is not spherical, it can be considered anisotropic. 64 The size of the deviation from the spherical angle can represent the anisotropy in Young's modulus, 14,16,17,19,22 which can be represented by the ratio of the maximum value to the minimum value of Young's modulus (E max :E min ratio). The anisotropy in Young's modulus of materials may have nothing to do with the crystal symmetry system.…”

“…In particular, many important achievements have been made in the exploration of superhard materials and electronic materials for light elements. − As a new generation of semiconductor materials, 3C BN can not only be used to fabricate electronic devices under extreme conditions such as high temperature, high frequency, and high power but also have wide application prospects in deep ultraviolet luminescence and detectors. Boron nitride materials may exhibit excellent properties of superhardness, − ductility, − , an ultrawide bandgap, − or, more rarely, the electronic property of metallicity. − …”

“…3−7 As a new generation of semiconductor materials, 3C BN can not only be used to fabricate electronic devices under extreme conditions such as high temperature, high frequency, and high power but also have wide application prospects in deep ultraviolet luminescence and detectors. Boron nitride materials may exhibit excellent properties of superhardness, 8−13 ductility, [14][15][16][17]21 an ultrawide bandgap, 14−21 or, more rarely, the electronic property of metallicity. 23−25 The atoms of 3C BN are stacked in a manner similar to that of diamond Si, 26 in a 3C stacking order.…”