Two-parameter multi-state memory device based on memristance and memcapacitance characteristics

Liu, Ruxin; Dong, Ruixin; Yan, Xiaobing; Yuan, Shuai; Dong, Zhen; Yang, Bing; Xiao, Xia

doi:10.7567/apex.11.114103

Cited by 10 publications

(4 citation statements)

References 22 publications

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“…The existence of a large memcapacitive effect is confirmed by measuring the remanent -overall-device capacitance C REM after the application of voltage write pulses between 0 and 1 V (small enough to avoid triggering a RESET transition). These measurements are shown in Figure 3(e) and display a C HIGH /C LOW ratio of ≈ 100, that is an order of magnitude higher than the figures reported so far [25][26][27][28][29][30][31][32][33]. We notice that C REM is a function of the equivalent circuit elements (Table 1) and the frequency ω, as described by the Maxwell-Wagner model [36].…”

Section: Characterization Of Voltage-controlled Devicesmentioning

confidence: 58%

“…A very interesting topotactic redox perovskite is La 1/2 Sr 1/2 Mn 1/2 Co 1/2 O 3−x (LSMCO), which displays and oxidized -more conducting-phase with x = 0 and a rhomboedral R 3c structure, as well as a reduced -more resistive-phase with x =0.62 and an orthorombic Pbnm structure [23]. We have shown [24] that epitaxial Nb:SrTiO 3 /LSMCO structures display a robust memristive behavior concomitant with a memcapacitive effect -reversible change in the capacitance between different non-volatile states [25][26][27][28][29][30][31][32][33]-. The memcapacitance found in this system -C HIGH /C LOW ≈ 900 at 10 kHz and ≈ 100 at 150 kHz-was the highest reported to date by a factor of ≈ 10 and originates at the NSTO/LSMCO interface, where a switchable p-n diode is formed [24].…”

Section: Introductionmentioning

confidence: 93%

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Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Acevedo,

Aguirre,

Ferreyra

et al. 2021

Preprint

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Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La 1/2 Sr 1/2 Mn 1/2 Co 1/2 O3−x (LSMCO) films grown on Nb:SrTiO3 (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation (( 001) and ( 110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices

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Section: Characterization Of Voltage-controlled Devicesmentioning

confidence: 58%

Section: Introductionmentioning

confidence: 93%

Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Acevedo,

Aguirre,

Ferreyra

et al. 2021

Preprint

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show abstract

“…Considerable efforts have been dedicated to the development of novel RS devices utilizing organic materials, such as organic monolayers [23], donor-acceptor-type copolymers [24], ferroelectric polymers [25], polymernanoparticle composites [26], and natural biomaterials [21]. Natural biomaterials are particularly promising due to their biodegradable, biocompatible, solution-processable, cost-effective, and eco-friendly nature [27,28].…”

Section: Introductionmentioning

confidence: 99%

Understanding the complementary resistive switching in egg albumen-based single sandwich structure with non-inert Al electrode

Xiao

Guo

Gao

et al. 2023

Mater. Res. Express

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The concept of complementary resistive switching (CRS) has been proposed as a potential solution for mitigating the unwanted sneak path current intrinsic to large-scale crossbar memory arrays. In this study, CRS devices based on egg albumen are fabricated using non-inert Al layers as the top electrodes (TE). The Al/Albumen/indium tin oxide (ITO) single sandwich structure achieves stable and reproducible CRS behavior without requiring a forming process. The application of a compliance current leads to an evolution from CRS to bipolar resistive switching (BRS). Furthermore, the BRS analog switching feature enables the emulation of synaptic functions, like paired-pulse facilitation (PPF) and paired-pulse depression (PPD). Our systematic and in-depth analyses demonstrate that the CRS is due to the interfacial Schottky barriers originating from the Al electrode oxidation. Consequently, the resistance switching behavior in the albumen-based cells with inert Pt top electrodes can further validate this model. These findings provide significant insight into the role of non-inert electrodes and contribute to a comprehensive understanding of the CRS mechanism, which may facilitate the development of high-performance CRS biodevices.

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“…1) The prominent issue becomes impending because the scaling of transistors cannot sustain in the near future. 2,3) As a comparison, the human brain deals with complex and intelligent tasks in an efficient way, which is ascribed to huge and powerful neural networks. 4) The neurons are connected by synapses, whose transmission efficiency (synaptic weight) updates depending on the history of signal passage.…”

mentioning

confidence: 99%

Ferroelectric polymer thin-film memristors with asymmetric top electrodes

Zhang¹,

Gao²,

Tang³

et al. 2022

Appl. Phys. Express

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A type of ferroelectric polymer thin-film memristors is demonstrated to show their potential in the emulation of synaptic plasticity. The memristive characteristics of the device arise from the design of asymmetric top electrodes capacitively coupled with a floating bottom electrode, which enables the local modulation of ferroelectric polarization in the ferroelectric terpolymer film. Basic synaptic functions, such as continuous increase/decrease in synaptic weight and paired-pulse facilitation, are successfully emulated using the ferroelectric polymer memristors. This work provides a promising approach to implementing ferroelectric mechanism in electronic synapses.

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Two-parameter multi-state memory device based on memristance and memcapacitance characteristics

Cited by 10 publications

References 22 publications

Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Understanding the complementary resistive switching in egg albumen-based single sandwich structure with non-inert Al electrode

Ferroelectric polymer thin-film memristors with asymmetric top electrodes

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