Two-photon absorption effect on semiconductor microring resonators

Ghadi, Amin; Mirzanejhad, Saeed

doi:10.1016/j.ijleo.2015.05.058

Cited by 5 publications

(7 citation statements)

References 13 publications

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“…To solve numerically the initial-boundary problems (1)(2)(3)(4)(5)(6)(7)(8), the uniform mesh in time and space coordinates can be defined as follows:…”

Section: Conservative Fdsmentioning

confidence: 99%

“…The FDS (58-75) approximated the initial-boundary problem (1)(2)(3)(4)(5)(6)(7)(8) with the second order on spatial coordinates and on time coordinate in inner mesh nodes concerning the point (x i , y j , z k , t m +0.5τ) on sufficient smooth solution of the differential problem.…”

Section: Theoremmentioning

confidence: 99%

“…Investigation of a high-intensity laser pulse interaction with a semiconductor is a very modern problem, and many authors referring to it. [1][2][3][4][5][6][7][8] Semiconductors are widely used due to the various nonlinear responses under a laser radiation action. Under certain conditions, the semiconductor response becomes bistable.…”

Section: Introductionmentioning

confidence: 99%

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Conservative finite‐difference scheme for computer simulation of contrast 3D spatial‐temporal structures induced by a laser pulse in a semiconductor

2020

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The numerical approach for computer simulation of femtosecond laser pulse interaction with a semiconductor is considered under the formation of 3D contrast time‐dependent spatiotemporal structures. The problem is governed by the set of nonlinear partial differential equations describing a semiconductor characteristic evolution and a laser pulse propagation. One of the equations is a Poisson equation concerning electric field potential with Neumann boundary conditions that requires fulfillment of the well‐known condition for Neumann problem solvability. The Poisson equation right part depends on free‐charged particle concentrations that are governed by nonlinear equations. Therefore, the charge conservation law plays a key role for a finite‐difference scheme construction as well as for solvability of the Neumann difference problem. In this connection, the iteration methods for the Poisson equation solution become preferable than using direct methods like the fast Fourier transform. We demonstrate the following: if the finite‐difference scheme does not possess the conservatism property, then the problem solvability could be broken, and the numerical solution does not correspond to the differential problem solution. It should be stressed that for providing the computation in a long‐time interval, it is crucial to use a numerical method that possessing asymptotic stability property. In this regard, we develop an effective numerical approach—the three‐stage iteration process. It has the same economic computing expenses as a widely used split‐step method, but, in contrast to the split‐step method, our method possesses conservatism and asymptotic stability properties. Computer simulation results are presented.

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“…To solve numerically the initial-boundary problems (1)(2)(3)(4)(5)(6)(7)(8), the uniform mesh in time and space coordinates can be defined as follows:…”

Section: Conservative Fdsmentioning

confidence: 99%

Section: Theoremmentioning

confidence: 99%

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Conservative finite‐difference scheme for computer simulation of contrast 3D spatial‐temporal structures induced by a laser pulse in a semiconductor

2020

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“…One of the important application of such investigation is a creation of an optical bistable element using various nonlinear responses of a semiconductor at a laser radiation exposure. As it is well-known, the optical bistability (OB) is a very promising phenomenon for creation and developing of all-optical data processing and many authors pay their attention to OB phenomenon research since pioneer works [10,11] and continued, for example, in [8,9,13,15,19,23,28,31,32,33,38,39]. In the case of OB existence, the hysteresis loop of semiconductor characteristics in dependence on a laser pulse intensity takes place.…”

Section: Introductionmentioning

confidence: 99%

Conservative finite-difference scheme for the 2D problem of femtosecond laser pulse interaction with kink structure of high absorption in semiconductor

Trofimov

Loginova

Egorenkov

2018

International Journal of Computer Mathematics

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The problem of high-intense laser pulse interaction with a semiconductor under the condition of a light energy nonlinear absorption, which results in high absorption domains formation, is considered. Such interaction allows reaching a construction of an element for all-optical data treatment. For its adequate description we propose new mathematical model taking into account the longitudinal and transverse diffraction effects. The longitudinal diffraction induced a reflection of laser radiation from boundaries of the high absorption domains that results in changing of their spatial structure. The conservative finite-difference scheme (FDS) is developed for numerical computation of the complicated nonlinear processes. The property of the FDS conservatism is proved. For the proposed FDS realization the two-stage iteration method is proposed. Computer simulation results are presented. We show the uniform boundedness of the mesh functions at the iterations and the convergence of the iteration process. We show also positiveness and boundedness of the mesh function corresponding to free-charged particles. We discuss some properties of differential problem including the problem invariants, positiveness of the free-charged concentrations. ARTICLE HISTORY

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“…Thus, it gives rise to high power density within the waveguide, hence increase the nonlinearity. One of the nonlinear effect that is found in silicon is the two-photon absorption (TPA) effect [11]- [14]. In silicon, TPA dominates the nonlinear loss mechanism at high light intensity within telecom wavelength network.…”

Section: Introductionmentioning

confidence: 99%

Soliton pulse induces TPA effect in a silicon MRR all-optical switch

Nawi

Ali

Yupapin

2015

2015 IEEE Conference on Systems, Process and Control (ICSPC)

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One of the critical problems in achieving a real practical all-optical switching devices is the requirement for a strong material nonlinearity. A strong material nonlinearity is crucial in order to achieve a low switching power. However, silicon-based all-optical switches require extremely high switching power due to its relatively weak nonlinear optical properties. To overcome this limitation, we have designed an all-optical switch configuration based on silicon microring resonator structure and demonstrated the switching operation based on the nonlinear effects induced by a soliton pulse. The soliton pulse induces freecarrier concentration through two-photon absorption (TPA) effect and this leads to enhance the refractive index change and enhance the nonlinearity of the silicon. Thus, the silicon microring resonator alters the nonlinear phase shift which is required for switching.

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Two-photon absorption effect on semiconductor microring resonators

Cited by 5 publications

References 13 publications

Conservative finite‐difference scheme for computer simulation of contrast 3D spatial‐temporal structures induced by a laser pulse in a semiconductor

Conservative finite‐difference scheme for computer simulation of contrast 3D spatial‐temporal structures induced by a laser pulse in a semiconductor

Conservative finite-difference scheme for the 2D problem of femtosecond laser pulse interaction with kink structure of high absorption in semiconductor

Soliton pulse induces TPA effect in a silicon MRR all-optical switch

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