Two-Photon Magnetoabsorption in ZnO

Dinges, R.; Fröhlich, D.; Staginnus, B.; Staude, W.

doi:10.1103/physrevlett.25.922

Cited by 42 publications

(13 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1, 15, 17 -21, 25 -28]. Note that a very strong argument for the Γ 7 -Γ 9 -Γ 7 ordering comes from the two-photon absorption presented by Dinges et al [89].…”

Section: Discussionmentioning

confidence: 92%

Bound exciton and donor–acceptor pair recombinations in ZnO

Meyer

Alves

Hofmann

et al. 2004

Physica Status Solidi (b)

1,609

153

1,169

View full text Add to dashboard Cite

The optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements. At liquid helium temperature in undoped crystals the neutral donor bound excitons dominate in the PL spectrum. Two electron satellite transitions (TES) of the donor bound excitons allow to determine the donor binding energies ranging from 46 to 73 meV. These results are in line with the temperature dependent Hall effect measurements. In the as-grown crystals a shallow donor with an activation energy of 30 meV controls the conductivity. Annealing annihilates this shallow donor which has a bound exciton recombination at 3.3628 eV. Correlated by magnetic resonance experiments we attribute this particular donor to hydrogen. The Al, Ga and In donor bound exciton recombinations are identified based on doping and diffusion experiments and using secondary ion mass spectroscopy. We give a special focus on the recombination around 3.333 eV, i.e. about 50 meV below the free exciton transition. From temperature dependent measurements one obtains a small thermal activation energy for the quenching of the luminescence of 10 ± 2 meV despite the large localization energy of 50 meV. Spatially resolved CL measurements show that the 3.333 eV lines are particularly strong at crystal irregularities and occur only at certain spots hence are not homogeneously distributed within the crystal contrary to the bound exciton recombinations. We attribute them to excitons bound to structural defects (Y-line defect) very common in II-VI semiconductors. For the bound exciton lines which seem to be correlated with Li and Na doping we offer a different interpretation. Li and Na do not introduce any shallow acceptor level in ZnO which otherwise should show up in donor -acceptor pair recombinations. Nitrogen creates a shallow acceptor level in ZnO. Donor -acceptor pair recombination with the 165 meV deep N-acceptor is found in nitrogen doped and implanted ZnO samples, respectively. In the best undoped samples excited rotational states of the donor bound excitons can be seen in low temperature PL measurements. At higher temperatures we also see the appearance of the excitons bound to the B-valence band, which are approximately 4.7 meV higher in energy.

show abstract

“…[1, 15, 17 -21, 25 -28]. Note that a very strong argument for the Γ 7 -Γ 9 -Γ 7 ordering comes from the two-photon absorption presented by Dinges et al [89].…”

Section: Discussionmentioning

confidence: 92%

Bound exciton and donor–acceptor pair recombinations in ZnO

Meyer

Alves

Hofmann

et al. 2004

Physica Status Solidi (b)

1,609

153

1,169

View full text Add to dashboard Cite

show abstract

“…Partly they also confirm the rather weak, experimentally observed anisotropy of the hole masses mentioned in chapter 5. See, e.g., the contributions by Hümmer,Helbig,Fröhlich,Kaule,or Pensl to [45,119].…”

Section: Appendix Amentioning

confidence: 99%

“…Data for the g factors can be found in various contributions to, e.g. [5,6,8,9,45,79,82,119,120,123,125].…”

Section: Appendix Amentioning

confidence: 99%

ZnO: From basics towards applications

Klingshirn

2007

Physica Status Solidi (b)

920

508

View full text Add to dashboard Cite

Several hundred thousands of tons of ZnO are used by per year, e.g. as an additive to concrete or to rubber. In the field of optoelectronics, ZnO holds promises as a material for a blue/UV optoelectronics, alternatively to GaN, as a cheap, transparent, conducting oxide, as a material for electronic circuits, which are transparent in the visible or for semiconductor spintronics. The main problem is presently, however, a high, reproducible and stable p-doping. We review in this contribution partly critically the material growth, fundamental properties of ZnO and of ZnO-based nanostructures, doping as well as present and future applications, with emphasis on the electronic and optical properties including stimulated emission.

show abstract

“…where one candetermine the band parameters independent of the DK and inl) Partly reported at the spring meeting of the Dentsche Physikalische Gescllschaft a t Freudenstadt 1972. dependent of assuming hydrogren-like exciton series. Recently Dinges et al [6] measured the Zeeman splitting of the 2P excitons by two-photon absorption. They have determined the hole masses of the two highest valence bands for the direction perpendicular to the crystallographic c-axes.…”

Section: Introductionmentioning

confidence: 99%